NTTFS4800NTAG Discrete Semiconductor Products |
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Allicdata Part #: | NTTFS4800NTAGOSTR-ND |
Manufacturer Part#: |
NTTFS4800NTAG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 5A 8WDFN |
More Detail: | N-Channel 30V 5A (Ta), 32A (Tc) 860mW (Ta), 33.8W ... |
DataSheet: | NTTFS4800NTAG Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 860mW (Ta), 33.8W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 964pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 16.6nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 11.5V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta), 32A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NTTFS4800NTAG is a type of transistor, specifically classified as a single FET (Field Effect Transistor) or MOSFET (Metal Oxide Semiconductor FET). As the name suggests, a FET is a type of transistor which functions by applying an electric field or voltage potential to the gate of the device, allowing current to flow through the drain and source terminals. It is a type of transistor used in many applications, from integrated circuits to power circuits.
The NTTFS4800NTAG is specifically a N-Channel type of transistor, meaning that the current will flow through the channel in a single direction. N-Channel FETS usually have higher efficiency than P-Channel FETs and are more suitable for use in power switching and switching power applications due to their lower on-state resistance. The NTTFS4800NTAG is designed with a robust construction, making them suitable for harsh power environments, while their low on-state resistance offers less power loss and improved efficiency.
The NTTFS4800NTAG is typically used in applications where it is necessary to switch DC (Direct Current) voltage levels, providing a fast and reliable switching solution. It can be used to switch high-power signals, such as audio and video signals, and can also be used in applications such as motor control, robotics, and power supply regulation. It can also be used to provide DC level conversion between high and low voltages, allowing for more efficient switching between power supplies.
The working principle of the NTTFS4800NTAG is simple; when a voltage potential is applied to the gate of the device, the current which is allowed to pass through the drain and source terminals will increase. This increase in current is known as “saturation current”, and it is determined by the gate-source voltage. When the voltage is removed, the current will decrease back to its initial level. The voltage required to reach saturation is known as the “threshold voltage”, and this is determined by the transistor’s construction.
In addition to the uses already mentioned, the NTTFS4800NTAG can also be used to provide power supply control, high-speed switching circuits, and analog signal switching. It is also commonly used in applications such as switching circuit motors and for general-purpose power switching.
In conclusion, the NTTFS4800NTAG is a robust, efficient single FET (Field Effect Transistor) or MOSFET (Metal Oxide Semiconductor FET). It has a low on-state resistance for improved efficiency, and is used in applications such as audio and video switching, motor control, switching power applications, DC level conversion, and other general power switching applications. Its working principle is relatively simple; when a voltage potential is applied to the transistor’s gate, the current flowing through the drain and source terminals will increase, and when the voltage is removed the current will decrease back to its initial level.
The specific data is subject to PDF, and the above content is for reference
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