Allicdata Part #: | NTTFS4945NTWG-ND |
Manufacturer Part#: |
NTTFS4945NTWG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 7.1A 8WDFN |
More Detail: | N-Channel 30V 7.1A (Ta), 34A (Tc) 890mW (Ta), 20W ... |
DataSheet: | NTTFS4945NTWG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 890mW (Ta), 20W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1194pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.1A (Ta), 34A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTTFS4945NTWG is a type of single field effect transistor (FET) and is widely used in power applications such as telecom, data processing and motor control. FETs are semiconductor components that use a gate, integrated circuit (IC) or MOSFETs to control the flow of electric current through a channel in the substrate. It is more efficient than traditional transistor designs, as it can give better performance with less power consumption.
The NTTFS4945NTWG is a N-channel FET with a maximum current rating of 8A. It has a total gate-source voltage of 5V, a total drain-source Current of 25mA and a total gate-drain voltage of +/-12V. It features a very low input capacitance and low input leakage current, which makes it suitable for use in applications where low power is paramount. It also has a very low on-resistance, making it one of the best FETs for high-speed switching applications.
In terms of its working principle, the NTTFS4945NTWG uses a gate terminal called the gate that is connected to the input voltage. When a voltage is applied to the gate, it creates an electric field between the source and drain. This electric field attracts electrons from the source, which then flow through the substrate channel to the drain. The voltage applied to the gate is used to control the current between the source and drain. When the gate to source voltage is low, the drain to source current is low, and when it is high, the drain to source current is high.
The NTTFS4945NTWG is designed for a wide range of applications, including power supply, voltage regulation, motor and amplifier control, data processing and telecom. In terms of power applications, it is often used in power supplies, voltage regulators and motor controllers, as it allows for better efficiency, reduced power requirements and improved system reliability. For data processing and telecommunications, the NTTFS4945NTWG is often used in optoelectronic and photonics applications, due to its excellent speed and low power characteristics. In terms of amplifier control, the NTTFS4945NTWG can extend the bandwidth of amplifiers, and also provide improved linearity and distortion characteristics.
The NTTFS4945NTWG is an efficient, reliable and cost-effective FET for a wide range of applications, and is a popular choice for power and data processing systems. It is easy to use, and its gate control ensures that it can be adjusted to an optimal level for a given application. With its low leakage current, high speed switching and low gate capacitance, the NTTFS4945NTWG is a great choice for any application that requires high performance with low power consumption.
The specific data is subject to PDF, and the above content is for reference
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