NTTFS4C10NTAG Allicdata Electronics

NTTFS4C10NTAG Discrete Semiconductor Products

Allicdata Part #:

NTTFS4C10NTAGOSTR-ND

Manufacturer Part#:

NTTFS4C10NTAG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 44A U8FL
More Detail: N-Channel 30V 8.2A (Ta), 44A (Tc) 790mW (Ta), 23.6...
DataSheet: NTTFS4C10NTAG datasheetNTTFS4C10NTAG Datasheet/PDF
Quantity: 1500
Stock 1500Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 790mW (Ta), 23.6W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 993pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NTTFS4C10NTAG is a single-chip, low-power, low-voltage, high-performance power management solution. It is designed to provide a simple solution for applications that require high integration, low power, and low cost.

The main benefit of NTTFS4C10NTAG lies in its flexibility, as it covers a wide range of applications by using a combination of various design parameters. It incorporates various power management features such as low-power standby, adjustable voltage, current limit, and over-temperature protection. The unique design of the device also supports multiple current pulse modes, enabling it to be used in various application scenarios.

The key feature of NTTFS4C10NTAG is its low-voltage operation. It is designed to operate at ultra-low voltages, with a maximum operating voltage of less than 1V. This allows for applications which require lower power consumption, such as smart wearable devices, for example. The low-voltage operation also reduces the power requirements for the device, enabling it to be used in low-power applications such as battery-operated systems or IoT edge nodes.

The power management solution includes a number of other features, such as adjustable output voltage, current limit and over-temperature protection. These features enable the device to be used efficiently in various applications, while minimizing power loss. Additionally, the device is designed to be highly reliable and robust, withstanding temperature fluctuations and environmental stress.

The working principle of NTTFS4C10NTAG is based on its integrated FETs (Field Effect Transistors). The FETs can be used to regulate and control the flow of current by applying a voltage to their gate. The FETs are connected to a power source and a load, and their gate voltage is adjustable in order to change their resistance, and thus control the flow of current. The current flow through the FETs can be controlled to regulate the output voltage, current limit, and over-temperature protection.

In addition to its power management features, NTTFS4C10NTAG also includes a temperature sensor and an adjustable voltage regulator to provide an improved level of protection to its integrated FETs. The temperature sensor allows the device to monitor its operating temperature and provide an emergency shut-down if the temperature gets too high. The adjustable voltage regulator allows the device to maximize the efficiency of its FETs, while minimizing the amount of power consumed.

NTTFS4C10NTAG is an ideal solution for applications which require high integration, low power, and low cost. It is designed to provide a simple and efficient power management solution for applications such as wearable devices, battery-operated systems, and IoT edge nodes. Its flexible design allows it to cover a wide range of applications, while its low-voltage operation ensures improved power efficiency and reliability.

The specific data is subject to PDF, and the above content is for reference

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