NTTFS4C13NTAG Discrete Semiconductor Products

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N-Channel MOS field-effect transistor (MOSFET) is a type of transistor used mainly in applications dealing with high power or high current. MOSFETs are a type of switching devices that are used in a wide range of applications such as power switches, motor control, audio amplifiers, and more. Basically, a MOSFET is a three-terminal device, with a source, drain, and gate. A MOSFET can be considered as a gate-controlled source-drain switch, which when turned on (by applying a signal to the gate), turns on the source-drain path or channel for current conduction.

N-channel MOSFETs are commonly classified by their rated power dissipation, breakdown voltage, on resistance, output capacitance, and frequency response. N-channel MOSFETs are usually used for power switching, motor control, and audio amplifiers applications. N-channel MOSFETs require a minimum gate voltage to turn on the device; this voltage, called gate threshold voltage, is usually in the range of 4 to 6V.

The NTTG4C13NTAG is a N-Channel MOSFET. It is a type of device that is commonly used in audio amplifier designs because of its superior performance. The NTTG4C13NTAG is a single FET creation that features excellent protection against transient voltage events, with built in drain-gate and source-drain series protection diodes. It also features a 20V Maximum Drain-to-Source Voltage, 25V Maximum Gate-to-source Voltage, and 25A Maximum Continuous Drain Current (Source-Drain).

In order to use this device, it should be connected between the gate and source of a switched load. When a voltage is applied to the gate, a current will then flow and the device will be turned on. This current is known as the gate current, and will depend on the gate voltage, the temperature of the device, the size of the load and other external characteristics. The gate current should be kept as low as possible to prevent unnecessary power loss.

Once the load current has been established, the voltage on the source terminal must be regulated to ensure that the device does not enter a constant-on or "latch-on" state. The maximum voltage allowable on the source will depend on the type of load and the specific device being used. If the voltage on the source exceeds this level, the device will be forced into a constant-on state.

The NTTG4C13NTAG is an excellent choice for power-switching applications thanks to its superior breakdown voltage and low operating temperature. Its excellent gate-drain isolation and source-drain protection diodes make it an ideal choice for applications where transient protection is an important concern. Additionally, its low input capacitance and low output capacitance make it well suited for audio amplifier applications where signal distortion is a key concern.

In summary, the NTTG4C13NTAG is a powerful and versatile N-channel MOSFET which is suitable for a variety of applications. It features an excellent breakdown voltage, low gate input current, and low output capacitance, making it ideal for audio amplifier designs, motor control applications, as well as power switching applications. Its excellent source-drain protection diodes and gate-drain isolation make it an ideal choice for applications that demand high levels of transient protection.

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