NTTFS4H05NTAG Discrete Semiconductor Products

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NTTFS4H05NTAG is a 4-terminal,high-voltage,superjunction MOSFET which is designed for superior performance in power electronic applications.The MOSFET operates as an ideal on-off switch with a very low on-state resistance and a strong body-diode,while also featuring a high static Coss of 1Pf. This makes it highly suitable for applications such as switch-mode power supplies,AC and DC motor drives,LED drivers,power converters and solid state relays.

The super-junction process of NTTFS4H05NTAGs yields a lower RDS(ON) compared to conventional MOSFETs and the ability to define positive and negative thresholds provides linear operation and an extended drain-source blocking capability.This type of MOSFET also exhibits a very high avalanche di/dt capability which eliminates false triggering, ensuring better and more stable switching in high-speed systems.

NTTFS4H05NTAG also features a low gate charge, reducing switching losses and increased power efficiency as well as a low noise threshold, resulting in reduced EMI levels. These features enable the device to perform well in high-frequency applications like digital DC-DC converters. Finally, it provides a low thermal resistance, reducing the risk of damage due to elevated junction temperatures and allowing higher operating temperature range.

The working principle of NTTFS4H05NTAG is based on the principles of MOSFETs. It is a three terminal device with Source, Drain, and Gate terminals. A high voltage potential is applied to the Drain and Source, and then a lower voltage potential is applied to the Gate. The voltage difference between the gate and the source and drain terminals induces an electric field across the semiconductor channel. This electric field modulates the number of charge carriers which pass through the channel and current is allowed to flow between the source and drain terminals.

The MOSFET is classified as a unipolar device since it relies on a single type of charge carrierto conduct electricity. Depending on the applied voltage to the Gate, the MOSFET can either remain blocked (Non conducting state) or become conducting (On state). The low onstate resistance of the NTTFS4H05NTAG allows very high switching frequencies and its high static Coss makes it suitable for high voltage applications.The MOSFET also features a strong body-diode, which enables the device to clamps transient over-voltage and shortcuts in power applications.

NTTFS4H05NTAG is used in a wide range of applications, including switch-mode power supplies, AC and DC motor drives, LED drivers, power converters, and solid-state relays. Due to its low on-state resistance, high-static Coss, and low thermal resistance, this MOSFET is also used in high-frequency applications such as digital DC-DC converters. Furthermore, its high avalanche di/dt capability ensures stable switching in high-speed systems.

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