NTTFS5826NLTWG Allicdata Electronics
Allicdata Part #:

NTTFS5826NLTWG-ND

Manufacturer Part#:

NTTFS5826NLTWG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 8A 8-WDFN
More Detail: N-Channel 60V 8A (Ta) 3.1W (Ta), 19W (Tc) Surface ...
DataSheet: NTTFS5826NLTWG datasheetNTTFS5826NLTWG Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 19W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NTTFS5826NLTWG is a type of enhancement-mode vertical D-MOSFET. This transistor is also called a power MOSFET due to its optimized design for power switching applications. It provides designers with a simple solution for efficient and reliable power switches.

The NTTFS5826NLTWG transistor has a drain-source voltage of 58V, a drain current of 9.5A and an on-resistance of just 0.26 ohms. This makes it a great choice for circuits that require high current drive capabilities. Additionally, it has a very low gate to source capacitance, enabling high switching speed compared to conventional bipolar transistors.

The NTTFS5826NLTWG transistor can be used in a variety of applications. It is ideal for use in power converters, motor control applications, automotive systems, power management and other switching applications.

The transistor works by utilizing the MOSFET (Metal–Oxide–Semiconductor Field Effect Transistor) principle. The MOSFET is essentially a switch connecting the source (S) to the drain (D) when the gate (G)is turned on. The amount of current that flows into the drain will depend on the voltage applied to the gate. When the voltage is higher than a certain threshold limit, the transistor is considered turned on. Thus, the gate controls the flow of current from the drain to the source.

In addition to its on-state resistance and low gate to source capacitance, the NTTFS5826NLTWG transistor also features a low gate to source junction leakage current. This ensures that the transistor will remain in its off-state, even when there is a small amount of gate drive. The transistor’s gate threshold voltage is typically around 4 volts, making it optimal for use in lower voltage applications.

Overall, the NTTFS5826NLTWG transistor is a great choice for high current drive applications. Its low on-state resistance and gate to source capacitance allows for fast switching speeds, while its low gate to source junction leakage current ensures that it will remain in its off-state. This allows designers to incorporate powerful power switches into their circuits with confidence. The NTTFS5826NLTWG is definitely a powerful transistor for designs requiring high current drive and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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