Allicdata Part #: | NTTFS4939NTWG-ND |
Manufacturer Part#: |
NTTFS4939NTWG |
Price: | $ 0.53 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 8.9A 8WDFN |
More Detail: | N-Channel 30V 8.9A (Ta), 52A (Tc) 850mW (Ta), 29.8... |
DataSheet: | NTTFS4939NTWG Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.48034 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 8.9A (Ta), 52A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5.5 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1979pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 850mW (Ta), 29.8W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Package / Case: | 8-PowerWDFN |
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As technology continues to advance, more and more components are being developed to help enhance various electronic devices. One such component is the NTTFS4939NTWG field effect transistor (FET). A FET, or field-effect transistor, is an electronic device that can be used to control the flow of electricity, acting as an amplifier, oscillator, digital switch, or voltage regulator. It consists of four terminals and operates using the flow of electrons over a semiconductor material.
The NTTFS4939NTWG is a single-gate FET, which means that it has one input and one output. This type of FET is commonly used in analog and digital circuit designs. It is typically used for amplifying and switching signals, as it can work with lower power sources than other types of FETs. It can also be used for high-speed applications, as it features a frequency up to 1GHz.
The NTTFS4939NTWG has a variety of applications. It can be used in power management and testing circuits, audio visual equipment, communication systems, and display panels. It can also be used in noise-prone settings, such as wind farms and power plants. In addition, the NTTFS4939NTWG can be used for general purpose circuits, including low-power indicator and control circuits, DC power switching circuits, audio amplifier circuits, and driver circuits.
The working principle of the NTTFS4939NTWG is based on the electric field created by the voltage applied to its gate. The applied voltage creates an electric field, which affects the transistor’s current flow due to the varying impedance across its terminals. The electric field is generated by the input signal and is used to modulate the resistance of the channel between the source and drain. This changes the amount of current flowing through the channel. The higher the voltage applied to the gate, the more current flows through the channel.
The NTTFS4939NTWG also features a high drain-source voltage rating of 17V and a drain current rating of 19A, making it an ideal choice for many high-power switch and amplifier applications. It also has a low on-resistance of only 19mΩ. This allows it to switch and amplify signals with minimal power loss.
In conclusion, the NTTFS4939NTWG is a single-gate FET that can be used in a variety of applications, from general-purpose circuits to high-performance applications such as power management and testing circuit, audio visual equipment, and communication systems. As it has a high drain-source voltage rating and a low on-resistance, it is an ideal choice for many electronic components. Its working principle is based on the electric field generated by the voltage applied to its gate.
The specific data is subject to PDF, and the above content is for reference
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