| Allicdata Part #: | NTTFS4821NTWG-ND |
| Manufacturer Part#: |
NTTFS4821NTWG |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 30V 7.5A 8WDFN |
| More Detail: | N-Channel 30V 7.5A (Ta), 57A (Tc) 660mW (Ta), 38.5... |
| DataSheet: |  NTTFS4821NTWG Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | 8-PowerWDFN |
| Supplier Device Package: | 8-WDFN (3.3x3.3) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 660mW (Ta), 38.5W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1755pF @ 12V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 11.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 7 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 11.5V |
| Current - Continuous Drain (Id) @ 25°C: | 7.5A (Ta), 57A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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Introduction
NTTFS4821NTWG is a high-performance N-channel MOSFET designed for advanced switching optimization and low conduction losses in the power supply of various high frequency DC/DC converters and switching power amplifiers. It has excellent on-state resistance and low gate threshold voltage, providing higher channel interorientation and superior signal integrity for applications that requires high switching speed.
Application Field
The NTTFS4821NTWG is mainly used in a variety of high frequency DC/DC converters such as those used in consumer electronic products, automotive electronic, computing and portable electronic devices, wireless communication system, LED lighting control and AC motor, instantaneous electric water heaters, and other high current systems.
Working Principle
The NTTFS4821NTWG is a high-speed low-RDS (on) N-channel MOSFET which adopts thick gate oxide technology. It is usually fabricated on a silicon-on-insulator (SOI) substrate. The structure of the device makes it have better cutoff characteristics, resulting in faster switching time and higher saturation current. During switching, the gate-source voltage control the channel current, and when a certain voltage level is reached, the drain current will be limited by the interorientation resistance of the semiconductor, thus achieving effective power optimization. The low gate threshold voltage reduces the gate drive power and improves the efficiency of the switching power converter.
Summary
In conclusion, the NTTFS4821NTWG is a high-performance N-channel MOSFET used for advanced switching optimization and low conduction losses in the power supply of various high frequency DC/DC converters and switching power amplifiers. It has excellent on-state resistance and low gate threshold voltage, providing higher channel interorientation and superior signal integrity. It is mainly used in a variety of high frequency DC/DC converters and other high current systems.
The specific data is subject to PDF, and the above content is for reference
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