Allicdata Part #: | NTTFS5811NLTWG-ND |
Manufacturer Part#: |
NTTFS5811NLTWG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 53.6A 8DFN |
More Detail: | N-Channel 40V 17A (Ta), 53A (Tc) 2.7W (Ta), 33W (T... |
DataSheet: | NTTFS5811NLTWG Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.7W (Ta), 33W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1570pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6.4 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Ta), 53A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTTFS5811NLTWG is a single N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is used in a variety of different applications. It is a popular choice for use in circuits because of its low power requirements, relatively low on-resistance, and fast switching speed. The N-Channel MOSFET is a three terminal device that acts as an amplifier, allowing a small signal from one of its circuits to control a much larger voltage between its gate and drain terminals. This makes it an ideal choice for applications such as switching power supplies, motor control, and audio amplifiers.
The NTTFS5811NLTWG is a high-side MOSFET, meaning that its source voltage is connected to the highest voltage in the application (typically VDD or VCC), and its drain voltage is connected to the output (typically GND). The gate voltage is determined by an input signal to the circuit. When the gate is driven to the same voltage as the source, the channel of the MOSFET is fully opened, and current can flow freely from the source to the drain. If the gate voltage is reduced, the channel begins to close, and the MOSFET acts as a resistor, reducing the source to drain current.
The NTTFS5811NLTWG has an on-resistance (RDS(on)) of 6mΩ, which is considered low. A low on-resistance translates to lower power dissipation and greater efficiency in the application. It is also rated for a maximum voltage of 58V and can handle junction temperatures up to 175° C. This makes it suitable for use in high-voltage applications, such as motor control and switching power supplies.
The NTTFS5811NLTWG also has a fast switching speed, with a drain-source turn-on time (tDS) of 2.8nS. This means that the MOSFET can respond quickly to changes in the gate voltage and quickly switch from a closed to an open state. This makes it an ideal choice for use in high frequency applications, such as switching power supplies, audio amplifiers, and motor control circuits.
The NTTFS5811NLTWG is a versatile MOSFET that can be used in a variety of different applications. Its low on-resistance, fast switching speed, and high voltage rating make it an ideal choice for high-performance applications. It can be used in circuits ranging from low voltage digital logic to high voltage motor control and switching power supplies.
The specific data is subject to PDF, and the above content is for reference
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