
Allicdata Part #: | NTTFS5C670NLTWG-ND |
Manufacturer Part#: |
NTTFS5C670NLTWG |
Price: | $ 0.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 16A 8WDFN |
More Detail: | N-Channel 60V 16A (Ta), 70A (Tc) 3.2W (Ta), 63W (T... |
DataSheet: | ![]() |
Quantity: | 1000 |
5000 +: | $ 0.28991 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.2W (Ta), 63W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Ta), 70A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NTTFS5C670NLTWG Application Field and Working Principle
The NTTFS5C670NLTWG is a type of single N-channel MOSFET, which stands for metal oxide semiconductor field-effect transistors. It plays a critical role in different electronic designs and is widely used in power electronic converters, motor drivers, and AC/DC power switching applications. In this article, we will explore the application field and working principle of NTTFS5C670NLTWG.
Application Field
As a single N-channel MOSFET, the NTTFS5C670NLTWG can be used in a variety of applications ranging from power converters to motor drivers. Specifically, its application field consists of the following:
- Lighting Control – The NTTFS5C670NLTWG can be deployed as a switching device in LED lighting systems, serving as a low-cost, low-power alternative to traditional lighting control technology.
- Power Converters – In power converter designs, the NTTFS5C670NLTWG can be deployed to regulate the amount of current flowing through a circuit. This helps ensure that the circuit is operating within safe limits for both voltage and current.
- Motor Drivers – The NTTFS5C670NLTWG can be used in motor driver designs to control the flow of current. This makes it particularly well-suited for applications that require precise control of current levels. The transistor is also able to withstand large amounts of current.
- AC/DC Power Switching – The NTTFS5C670NLTWG can be used in AC/DC power switching applications to switch current between two states. This makes it ideal for applications that require a high level of precision. The transistor is also able to adapt quickly to changes in current levels.
Working Principle
The NTTFS5C670NLTWG is a single N-channel MOSFET, which means it consists of one MOSFET transistor with an N-type channel. This type of transistor has the ability to switch large amounts of current with low-power inputs, making it highly efficient. Additionally, the transistor has a high current capacity and low drain-to-source resistance.
The MOSFET works by using the gate voltage to control the flow of electrons through the channel. When the gate voltage is low, electrons are unable to flow through the channel, effectively blocking the current. When the gate voltage is increased, electrons are allowed to flow through the channel, allowing current to flow.
The MOSFET also has the ability to act as either a switching device or an amplifier. When used as a switching device, the transistor is capable of rapidly switching between two states. When used as an amplifier, the transistor is able to increase the voltage or current of a signal. This makes it suitable for both power switching applications and analog signal processing.
In conclusion, the NTTFS5C670NLTWG is a single N-channel MOSFET with a wide range of applications, from power converters to lighting control. Its ability to rapidly switch between two states and its high current capacity make it an ideal choice for many different designs. Additionally, its low power requirements and low drain-to-source resistance mean that it is an efficient choice for electronic designs.
The specific data is subject to PDF, and the above content is for reference
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