
Allicdata Part #: | NTTFS4824NTWG-ND |
Manufacturer Part#: |
NTTFS4824NTWG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 8.3A 8WDFN |
More Detail: | N-Channel 30V 8.3A (Ta), 69A (Tc) 660mW (Ta), 46.3... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-WDFN (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 660mW (Ta), 46.3W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2363pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 11.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 11.5V |
Current - Continuous Drain (Id) @ 25°C: | 8.3A (Ta), 69A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NTTFS4824NTWG is a type of transistor, specifically Single Field-Effect Transistor (FET). FETs are transistors which uses a small electric charge to manipulate the behaviour of a larger current or voltage between two terminals. NTTFS4824NTWG uses semiconductor materials like Silicon or Gallium Arsenide, which can easily be broken down into very thin layers of the material with an electric current. This allows the user to control the flow of electricity through the transistor using a very small amount of energy.
The NTTFS4824NTWG is a single monopole MOSFET, meaning it has only one N-channel and one P-channel semiconductor device. This type of FET is ideal for applications which require very high speed switching, such as motor controllers or power amplifiers. This type of MOSFET typically has a lower threshold voltage than other FETs, meaning it can be used in applications with lower voltage levels. Additionally, NTTFS4824NTWG is also capable of extremely fast switching speeds, making it ideal for applications that require very fast switching times.
The working principle of NTTFS4824NTWG involves the use of a voltage gate to control the flow of current between the N and P channel. The voltage gate is connected to the gate terminal of the MOSFET, and when a high enough voltage is applied, it allows electrons to flow between the N and P channels of the transistor. This flow of current is then controlled by adjusting the voltage on the gate terminal. The current flow between the N and P terminals is also controlled by the voltage applied to the source and drain terminals.
NTTFS4824NTWG has a variety of applications in the world of electronics. Its low threshold voltage and fast switching speeds make it ideal for use in motor controllers and power amplifiers, as well as for switching circuits which require very rapid switching times. It is also used in radio frequency applications such as Wi-Fi and Bluetooth, as it is capable of operating at very high frequencies. In addition, NTTFS4824NTWG is commonly used in high voltage application such as power converters and power correction circuits.
Overall, NTTFS4824NTWG is an extremely useful transistor, used in a variety of applications. Its low threshold voltage and fast switching speeds make it ideal for use in motor controllers and power amplifiers, as well as in wireless communication applications. Additionally, its usage in high voltage applications makes it particularly useful in power correction and power conversion applications. As a result, NTTFS4824NTWG is an essential component in many different electronics applications.
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