![PTFB093608FV-V3-R0 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | PTFB093608FV-V3-R0-ND |
Manufacturer Part#: |
PTFB093608FV-V3-R0 |
Price: | $ 106.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | FET RF 2CH 65V 960MHZ H-37275G-6 |
More Detail: | RF Mosfet LDMOS (Dual), Common Source 28V 2.8A 960... |
DataSheet: | ![]() |
Quantity: | 1000 |
50 +: | $ 96.86110 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS (Dual), Common Source |
Frequency: | 960MHz |
Gain: | 20dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 2.8A |
Power - Output: | 315W |
Voltage - Rated: | 65V |
Package / Case: | H-34275G-6/2 |
Supplier Device Package: | H-34275G-6/2 |
Description
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<p>The PTFB093608FV-V3-R0 is a RF transistor device specially designed for a range of applications. It is a versatile monolithic integrated circuit containing a variety of devices that can be used in an RF circuit of up to 900 MHz. This device has an ultra-low capacitance, a small footprint, and a wideband passband up to 900 MHz. It has a noise figure of 0.5 dB, making it suitable for a wide variety of applications. This device is available in two sizes and three versions (V1, V2, and V3). A wide range of application fields can be serviced with this device.</p><p>The working principle of the PTFB093608FV-V3-R0 is based on the gate-controlled injection of charge carriers in an insulated-gate field-effect transistor (IGFET) or metal-oxide-semiconductor field-effect transistor (MOSFET). The gate acts as an electrical switch to control the current flow through the channel. It modulates the applied gate bias to adjust the current flow. When the charge carriers are injected into the channel, they are modulated by the gate voltage and result in a controllable electric field. The electric field induces a current between the source and drain electrodes of the device, leading to a controlled current flowing through the channel.</p><p>The various versions of the PTFB093608FV-V3-R0 are designed for different application fields, leveraging their different characteristics. For example, V1 is recommended for digital signal processing, V2 for broadcasting, and V3 for satellite communication. They are available in various packages to meet the requirements of their various application fields.</p><p>In broadcasting and digital signal processing applications, the PTFB093608FV-V3-R0 is particularly useful due to its wideband passband of up to 900 MHz and its low noise figure of 0.5 dB. The device has a low propagation delay, making it suitable for fast switching requirements and timing-sensitive applications. It also has extremely low power consumption, making it suitable for battery-powered applications. In broadcasting applications, its wideband passband ensures that signals of different frequency ranges can be accommodated in a single device.</p><p>For satellite communication applications, the PTFB093608FV-V3-R0 is ideal due to its excellent performance. Its small footprint, ultra-low capacitance, low power consumption, and wideband passband make it suitable for a wide range of requirements in satellite communication. The device’s small size and low capacitance also allow it to be mounted on a miniaturized satellite with limited space and power requirements. The device can support a range of communication channels and its wideband passband ensures that a wider range of frequencies can be used for communication.</p><p>In summary, the PTFB093608FV-V3-R0 is an ideal device for a range of application fields, including broadcasting and digital signal processing, satellite communication, and many others. It has an ultra-low capacitance, a small footprint, a wideband passband up to 900 MHz, and a low-noise figure of 0.5 dB. This makes it suitable for a variety of applications. It is available in two sizes and three versions, allowing it to be tailored to the specific requirements of the application.</p>
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