PTFB211503EL-V1-R250

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PTFB211503EL-V1-R250 is a high performance RF MOSFET transistor specifically designed for radio frequency applications. This transistor combines high power, high voltage and low on resistance in a very small footprint.

The PTFB211503EL-V1-R250 offers a wide range of features that make it suitable for a variety of radio frequency applications, such as RF power amplifiers, low noise amplifiers, power switches, linear and switching voltage regulators, as well as other high frequency applications. It also features a low input capacitance, which is beneficial for noise-sensitive applications.

The PTFB211503EL-V1-R250 is a N-channel enhancement mode MOSFET with a maximum drain source voltage of 11V. This transistor has a maximum drain current of 6A, a gate threshold voltage of 3V, and a maximum power rating of 5W. It has an impressively low on-resistance of 0.43ohm, minimized gate charge and a low overall parasitic inductance.

The low input capacitance and low turn-on threshold open the doors for a variety of radio frequency applications, including mixer stages, oscillators, LNAs, PA stages and more. The small size of the PTFB211503EL-V1-R250 also makes it a convenient choice for small-footprint applications.

The working principle behind the PTFB211503EL-V1-R250 is quite simple and straightforward. Once a small current is flowing through the Gate-Source circuit, the transistor will start to allow current to flow through the Drain-Source circuit. This is known as the Enhancement Mode, as the transistor can increase its own channel conductivity when the gate bias voltage is applied. When the gate bias voltage is removed, the channel conductivity will reduce and the transistor will again be the block for current until the gate bias voltage is reapplied.

The PTFB211503EL-V1-R250 is an ideal transistor for a variety of RF applications. Its small size and low cost make it an attractive choice for designers looking for an optimized, efficient and cost-effective solution for their application. Its combination of high power, high voltage and low on resistance make it a highly versatile device for a variety of high-frequency applications.

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