SI4909DY-T1-GE3 Discrete Semiconductor Products

Series:	TrenchFET®
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 P-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	40V
Current - Continuous Drain (Id) @ 25°C:	8A
Rds On (Max) @ Id, Vgs:	27 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	63nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	2000pF @ 20V
Power - Max:	3.2W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

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SI4909DY-T1-GE3 is a high voltage junction transistor array, which is a combination of six transistors in a single IC package. It is typically used as a switch or power amplifier in electronic circuits. Designed to be used in high voltage applications, it has a wide variety of applications in a variety of fields including automotive, industrial, medical, and consumer electronics.The SI4909DY-T1-GE3 consists of six transistors, each of which is separately controllable by using a separate external voltage and control terminal. The array has a total gate voltage of -25V to +125V with a single supply voltage of 8V to 40V. The threshold voltage is typically 0.5V and the drain current is usually limited to 6mA. Additionally, the common source terminal is connected internally to the drain of the six transistors and the protection diode allows for a maximum drain current of 12mA.The SI4909DY-T1-GE3 offers a number of features and benefits, including a low RDS(on), fast switching, excellent noise immunity, and low power consumption. All of these features make it ideal for a wide range of applications from power MOSFETs in motor drives and power amplifiers to audio amplifiers, low-level logic signals, and analog signal processing.The working principle of SI4909DY-T1-GE3 is based on the junction field-effect transistor (JFET). A JFET consists of an insulated gate and a channel between a source and a drain. A voltage applied between the gate and the source of the device controls the amount of current flowing between the source and the drain.In operation, the current between the source and the drain is controlled by the voltage VGS applied between the gate and the source. A positive VGS increases the electric field in the channel, which increases the current between the source and the drain. A negative VGS decreases the electric field in the channel, which decreases the current between the source and the drain. This direct current is amplified and can be used as a switch or for audio voltage gain in applications such as audio amplifiers.The SI4909DY-T1-GE3 is ideal for applications that require high voltage switching and power amplification. Its low power consumption and excellent noise immunity make it suitable for a variety of automotive electronic devices. Its fast switching speed and wide gate voltage range make it suitable for numerous industrial, medical, and consumer electronics applications. In addition, its long-term reliability and high temperature capability make it suitable for long-term, harsh environmental applications. The SI4909DY-T1-GE3 is a versatile device that can be easily integrated into new and existing designs.

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