Allicdata Part #: | SI4963BDY-T1-GE3-ND |
Manufacturer Part#: |
SI4963BDY-T1-GE3 |
Price: | $ 0.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 20V 4.9A 8SOIC |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 4.9A 1.1W Surf... |
DataSheet: | SI4963BDY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.53794 |
Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
Base Part Number: | SI4963 |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.1W |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 32 mOhm @ 6.5A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.9A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI4963BDY-T1-GE3 array is a MOSFET device used in many electronic applications. This high-performance device has a broad set of features that make it attractive to many users. It is a silicon-carbide (SiC) based device, which adds to its advantages. In this article, we will discuss the SI4963BDY-T1-GE3 application field and working principle.
The SI4963BDY-T1-GE3 is a 4-channel array of MOSFETs designed for use in power applications. It is a highly integrated device that combines the functions of four MOSFETs into one package. It has a wide voltage range of 2.5V to 10V and can handle currents of up to 1A per channel. The on-resistance of the device is very low, making it well suited for applications that require low power consumption.
The SI4963BDY-T1-GE3 is commonly used in everyday electronics, such as in power supplies, switching circuits, and other power applications. It is also used in the automotive industry, specifically in electric and hybrid vehicle circuits. The SI4963BDY-T1-GE3 can also be used in computer power management applications, such as in laptop power converters.
The SI4963BDY-T1-GE3 is a power efficiency-oriented device, and as such, it needs some extra protection in order to prevent damage. This is done using an integrated over-current and over-voltage protection circuit, which is designed to turn off the device when it is subjected to a voltage and/or current spike. This protection circuit is important for applications that require constant power supply, and where an abrupt change in power can have disastrous effects on the system.
The operation of the SI4963BDY-T1-GE3 is based on the principle of MOSFETs. A MOSFET is a type of transistor which has three terminals: the gate, the source and the drain. The MOSFET works by controlling the amount of current that flows between the source and the drain through the gate. By controlling the amount of current that flows through the device, the SI4963BDY-T1-GE3 can switch on or off loads connected to the drain and source terminals.
The SI4963BDY-T1-GE3 is a great device for power management applications. It is efficient, reliable and economical. It is also a great option for electric and hybrid vehicle applications, due to its high current ratings and low on-resistance. The device also features over-current and over-voltage protection, which is essential for reliable operation. The SI4963BDY-T1-GE3 is a versatile device that can handle a wide range of voltage and current ranges, making it a great choice for many different power applications.
The specific data is subject to PDF, and the above content is for reference
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