Allicdata Part #: | SI4942DY-T1-E3TR-ND |
Manufacturer Part#: |
SI4942DY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 40V 5.3A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 40V 5.3A 1.1W Surf... |
DataSheet: | SI4942DY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Base Part Number: | SI4942 |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.1W |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 21 mOhm @ 7.4A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.3A |
Drain to Source Voltage (Vdss): | 40V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
The SI4942DY-T1-E3 is a dual FET technology that provides superior performance and various options in automotive, industrial, and semiconductor applications. It is a perfect solution to reduce power consumption while providing greater reliability and long-term operation. It is capable of handling high-current and high-voltage applications. This FET array is designed to have both maximum power efficiency and flexibility to meet any high performance needs.
Application Fields
The SI4942DY-T1-E3 can be used in various high-current and high-voltage applications. It is well-suited for automotive applications, such as high-power in-vehicle communications systems, permanent magnet engines, and powertrain systems. It can also be used in many industrial and semiconductor applications, including powering high-voltage switches and relays, high-performance AC/DC converters, and voltage regulator modules. Furthermore, it can provide a reliable power management solution for power supplies, motor drivers, and other power control circuits.
Working Principle
The working principle of the SI4942DY-T1-E3 FET array is based on its dual-gate structure and power-efficient transistors. The dual gate structure provides superior speed and control while reducing power consumption. The power-efficient transistors are designed to consume less power and provide greater reliability and long-term operation. The FET array is designed to have optimal energy efficiency, with dual gate transistors operating in the right sequence and controlling power consumption in each stage.
The FET array also has a built-in self-protection function that monitors power consumption and temperature in real-time. The self-protection function prevents excessive current consumption and overheating, allowing the device to operate more reliably in high-volts and high-current applications. Additionally, the FET array is available in a variety of package sizes, making it suitable for a wide range of automotive, industrial, and semiconductor applications.
Conclusion
The SI4942DY-T1-E3 is an ideal solution for a wide range of high-current and high-voltage applications. It provides superior performance and various options, while reducing power consumption and providing long-term reliability. It is suitable for automotive, industrial, and semiconductor applications and comes in a variety of package sizes. Additionally, its self-protection system ensures that no excessive current consumption or overheating occurs, making it a reliable and powerful solution.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SI4906DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 40V 6.6A 8-S... |
SI4908DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 40V 5A 8-SOI... |
SI4910DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 40V 7.6A 8-S... |
SI4913DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 7.1A 8-S... |
SI4914DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 5.5A 8-S... |
SI4933DY-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 12V 7.4A 8-S... |
SI4941EDY-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 30V 10A 8-SO... |
SI4944DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 9.3A 8-S... |
SI4947ADY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 3A 8-SOI... |
SI4953ADY-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 30V 3.7A 8-S... |
SI4972DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 10.8A 8S... |
SI4973DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 5.8A 8-S... |
SI4974DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 6A 8-SOI... |
SI4992EY-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 75V 3.6A 8-S... |
SI4952DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 25V 8A 8-SOI... |
SI4920DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 8-SOICMo... |
SI4942DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 40V 5.3A 8-S... |
SI4914BDY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 8.4A 8-S... |
SI4914BDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 8.4A 8-S... |
SI4932DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 8A 8-SOI... |
SI4916DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 10A 8-SO... |
SI4925BDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 5.3A 8-S... |
SI4963BDY-T1-GE3 | Vishay Silic... | 0.6 $ | 1000 | MOSFET 2P-CH 20V 4.9A 8SO... |
SI4922BDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 8A 8-SOI... |
SI4936ADY-T1-GE3 | Vishay Silic... | 0.69 $ | 1000 | MOSFET 2N-CH 30V 4.4A 8-S... |
SI4943BDY-T1-GE3 | Vishay Silic... | 0.72 $ | 1000 | MOSFET 2P-CH 20V 6.3A 8-S... |
SI4936CDY-T1-E3 | Vishay Silic... | 0.19 $ | 1000 | MOSFET 2N-CH 30V 5.8A 8SO... |
SI4906DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 40V 6.6A 8-S... |
SI4910DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 40V 7.6A 8-S... |
SI4913DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 7.1A 8-S... |
SI4947ADY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 30V 3A 8-SOI... |
SI4953ADY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 3.7A 8-S... |
SI4992EY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 75V 3.6A 8-S... |
SI4908DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 40V 5A 8-SOI... |
SI4920DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 8-SOICMo... |
SI4923DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 6.2A 8-S... |
SI4923DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 30V 6.2A 8-S... |
SI4933DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 12V 7.4A 8-S... |
SI4940DY-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 40V 4.2A 8-S... |
SI4940DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 40V 4.2A 8-S... |
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...
MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...
MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...
MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...
MOSFET 2N-CH 56LFPAKMosfet Array
MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...