SI4942DY-T1-E3 Allicdata Electronics
Allicdata Part #:

SI4942DY-T1-E3TR-ND

Manufacturer Part#:

SI4942DY-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2N-CH 40V 5.3A 8-SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 40V 5.3A 1.1W Surf...
DataSheet: SI4942DY-T1-E3 datasheetSI4942DY-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Base Part Number: SI4942
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Input Capacitance (Ciss) (Max) @ Vds: --
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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Introduction

The SI4942DY-T1-E3 is a dual FET technology that provides superior performance and various options in automotive, industrial, and semiconductor applications. It is a perfect solution to reduce power consumption while providing greater reliability and long-term operation. It is capable of handling high-current and high-voltage applications. This FET array is designed to have both maximum power efficiency and flexibility to meet any high performance needs.

Application Fields

The SI4942DY-T1-E3 can be used in various high-current and high-voltage applications. It is well-suited for automotive applications, such as high-power in-vehicle communications systems, permanent magnet engines, and powertrain systems. It can also be used in many industrial and semiconductor applications, including powering high-voltage switches and relays, high-performance AC/DC converters, and voltage regulator modules. Furthermore, it can provide a reliable power management solution for power supplies, motor drivers, and other power control circuits.

Working Principle

The working principle of the SI4942DY-T1-E3 FET array is based on its dual-gate structure and power-efficient transistors. The dual gate structure provides superior speed and control while reducing power consumption. The power-efficient transistors are designed to consume less power and provide greater reliability and long-term operation. The FET array is designed to have optimal energy efficiency, with dual gate transistors operating in the right sequence and controlling power consumption in each stage.

The FET array also has a built-in self-protection function that monitors power consumption and temperature in real-time. The self-protection function prevents excessive current consumption and overheating, allowing the device to operate more reliably in high-volts and high-current applications. Additionally, the FET array is available in a variety of package sizes, making it suitable for a wide range of automotive, industrial, and semiconductor applications.

Conclusion

The SI4942DY-T1-E3 is an ideal solution for a wide range of high-current and high-voltage applications. It provides superior performance and various options, while reducing power consumption and providing long-term reliability. It is suitable for automotive, industrial, and semiconductor applications and comes in a variety of package sizes. Additionally, its self-protection system ensures that no excessive current consumption or overheating occurs, making it a reliable and powerful solution.

The specific data is subject to PDF, and the above content is for reference

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