Allicdata Part #: | SI4910DY-T1-E3TR-ND |
Manufacturer Part#: |
SI4910DY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 40V 7.6A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 40V 7.6A 3.1W Surf... |
DataSheet: | SI4910DY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Base Part Number: | SI4910 |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 3.1W |
Input Capacitance (Ciss) (Max) @ Vds: | 855pF @ 20V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 6A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.6A |
Drain to Source Voltage (Vdss): | 40V |
FET Feature: | Standard |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI4910DY-T1-E3 is a compact, highly integrated 3-channel, individually level shiftable ESD-protected MOSFET array. It is designed for use in applications around hot pluggable ports, such as systems using USB, Thunderbolt, HDMI, and other digital interfaces. With its integrated ESD protection, the device can minimize costly circuit damage caused by electrostatic discharge events. It offers an industry-leading solution for applications such as protection of power ports, data lines, and other sensitive digital devices. The device also offers a number of other features, such as a low on-resistance, high voltage breakdown, and fast performance.
The SI4910DY-T1-E3 consists of three channels, each of which consists of a high-voltage MOSFET and an individual ESD protection component. Each channel is individually level shiftable and has its own transient clamping, allowing for protection from ESD events of up to 8kV. The device also has a high breakdown voltage of 30V and an on-resistance of only 900mΩ, allowing for efficient operation. The device is also equipped with an on-chip driver, allowing for easy interface to other systems.
The working principle of the SI4910DY-T1-E3 is based on the use of the MOSFETs and their associated ESD protection components to provide linear protection against ESD events. The device works by quickly tripping the MOSFET in each of the channels when an ESD event occurs. This causes the current to be diverted away from the sensitive circuitry, preventing it from being damaged. The ESD protection component then clamps the voltage so that it does not exceed the breakdown voltage of the device.
The SI4910DY-T1-E3 is an ideal solution for applications that require robust ESD protection and level shifting. The device is capable of handling ESD events of up to 8kV without any damage and allows for efficient operation, thanks to its low on-resistance. Additionally, the integrated driver makes it easy to interface with other components, making the device even more attractive for a variety of applications.
With its ability to handle ESD events and its integrated level shifting capabilities, the SI4910DY-T1-E3 is an excellent choice for protection of power ports, data lines, and other sensitive digital devices in applications such as USB, Thunderbolt, HDMI and other digital interfaces. Its small size and low cost make it an attractive solution for applications that require robust ESD protection and level-shifting capabilities.
The specific data is subject to PDF, and the above content is for reference
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