Allicdata Part #: | SI4920DY-T1-E3TR-ND |
Manufacturer Part#: |
SI4920DY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 30V 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 2W Surface Mo... |
DataSheet: | SI4920DY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
Base Part Number: | SI4920 |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2W |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 6.9A, 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI4920DY-T1-E3 is an integrated logic device that is used in a variety of applications. It is a three-terminal MOSFET array, typically used in power converters, power management applications, address decoders, and in analog data sampling. It is part of a family of integrated logic devices that combine the features of a power MOSFET, a logic gate, and a digital-to-analog converter.
The SI4920DY-T1-E3 has two main functions: switching and logic processing. It is designed to switch power between two points, typically one low power supply (3.3V or 5V) and another higher power supply (12V, 24V or higher). When the input signal goes low, the SI4920DY-T1-E3 will switch power from the higher power supply to the lower power supply. The device can also be used as a control element for power converters and power management applications, allowing them to be controlled efficiently. Additionally, it can be used as an address decoder, used to select specific memory locations in a memory array. Finally, it can be used as a digital-to-analog converter to convert digital signals into analog signals.
The SI4920DY-T1-E3 works by controlling the voltage that is supplied to the drain terminals. When the gate voltage is set to low (Vg=0), the drain voltage is held at Vdd. When the gate voltage is set to high (Vg=Vdd+Vgs), the drain voltage changes from Vdd to the channel voltage Vch. This change in the drain voltage is what triggers the switching of power.
The SI4920DY-T1-E3 operates on the principle of junction capacitance. If the drain to source junction is reverse biased, the junction capacitance will be high and a large voltage will be necessary to reduce the junction capacitance. Conversely, if the junction is forward biased, the junction capacitance will be low and a smaller voltage will be required to achieve the same result.
The SI4920DY-T1-E3 has several advantages over other logic devices. For one, it has a very low ON resistance, allowing it to switch faster and with less power. Additionally, it is capable of controlling higher loads than most other logic devices. This is useful for applications where controlling higher current is necessary. Finally, it is quite small, making it easy to integrate into existing designs.
The SI4920DY-T1-E3 is an excellent choice for power management, switching, and logic processing applications. It combines the features of a power MOSFET, a logic gate, and a digital-to-analog converter, making it an extremely versatile device. With its low ON resistance and ability to control higher currents, the SI4920DY-T1-E3 is an ideal solution for applications where power management and accuracy is essential.
The specific data is subject to PDF, and the above content is for reference
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