SI4952DY-T1-GE3

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The SI4952DY-T1-GE3 is a matched pair of integrated N-channel depletion mode MOSFETS, designed for efficient and reliable power management of portable applications such as cell phones and digital cameras.

The device features two N-channel devices which can be used in parallel to provide higher currents, or connected in series to provide higher voltages or reverse second breakdown protection.

The device is constructed using an advanced submicron process to provide higher performance and yields than the previous generations of MOSFETs. The device has an on-state resistance of 8 milliohms and a gate-source voltage of 12.5V. It is designed to work over the temperature range of -55°C to 150°C and has a low on-state resistance for increased efficiency.

The SI4952DY-T1-GE3 has a wide range of applications from switching circuits and motor control to power supply regulation and battery protection. The device can be used to control power in portable devices such as cell phones, digital cameras and handheld computer systems.

The working principle of the device is fairly simple. The gate is connected to the control circuit which determines the current through the device. When the gate is driven high, more current flows through the device and the device turns on. When the gate is driven low, the device turns off. This is the basic principle of operation of most MOSFET devices.

The SI4952DY-T1-GE3 is an excellent choice for power management in portable devices and is designed to provide reliable and efficient performance over a wide range of temperature and voltage conditions. It offers low on-state resistances for increased efficiency and superior performance.

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