Allicdata Part #: | SI4908DY-T1-GE3-ND |
Manufacturer Part#: |
SI4908DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 40V 5A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 40V 5A 2.75W Surfa... |
DataSheet: | SI4908DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Base Part Number: | SI4908 |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2.75W |
Input Capacitance (Ciss) (Max) @ Vds: | 355pF @ 20V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 4.1A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A |
Drain to Source Voltage (Vdss): | 40V |
FET Feature: | Standard |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI4908DY-T1-GE3 is a very versatile type of transistor array which is used in a variety of applications. It is a member of a large family of transistors known as the FETs (Field Effect Transisitors) or MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) which are used in a wide range of electronic circuits. The SI4908DY-T1-GE3 is composed of four power MOSFETs which are connected in anti-parallel configurations, allowing for a wide range of functionalities.The SI4908DY-T1-GE3 has a number of applications in areas such as automotive, industrial and consumer electronics. In automotive applications, the SI4908DY-T1-GE3 is often used as a high-speed switch, capable of controlling the flow of power to various parts of the car. It is also used in industrial applications, such as controlling the motors which drive production lines. In consumer electronics, it can be used to control the power supply to electronic devices, such as TVs, gaming consoles and other electronic appliances.The SI4908DY-T1-GE3 is capable of handling large currents between its drain and source, making it ideal for applications where large amounts of power must be transferred between two or more components. The high-frequency operation of the transistor array also makes it suitable for use in high-speed switching applications.The working principle of the SI4908DY-T1-GE3 is based on the principles of operation of MOSFETs. When a MOSFET is activated, an electric field is created between the gate and the source and drain. This electric field controls the flow of electrons between the source and drain and is what allows the transistor to switch between the on and off states.The SI4908DY-T1-GE3 can operate at voltages up to 20V, and can handle a maximum current of 4 amperes. This makes it suitable for a wide range of applications, including power supplies, motor control and automotive applications. Due to its versatility and wide range of possible uses, the SI4908DY-T1-GE3 is a cost effective solution for many electronic circuit applications.The SI4908DY-T1-GE3 is an excellent example of how modern transistor arrays can be used in many different applications. By taking advantage of the principles of MOSFETs, it is possible to achieve a wide range of functionalities, making the SI4908DY-T1-GE3 a cost effective and versatile solution for many electronic circuit applications.
The specific data is subject to PDF, and the above content is for reference
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SI4922BDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 8A 8-SOI... |
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