Allicdata Part #: | SI4941EDY-T1-E3TR-ND |
Manufacturer Part#: |
SI4941EDY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 30V 10A 8-SOIC |
More Detail: | Mosfet Array 2 P-Channel (Dual) 30V 10A 3.6W Surfa... |
DataSheet: | SI4941EDY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.8V @ 250µA |
Base Part Number: | SI4941 |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 3.6W |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 21 mOhm @ 8.3A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI4941EDY-T1-E3 is a high-performance enhancement-mode integrated circuit specifically designed for applications that require large amounts of power. This transistor array includes an array of four small-signal LD MOSFETs, which are essentially identical to standard MOSFETs with their own small gate capacitance and correspondingly low threshold voltage.
This transistor array has low threshold voltage and high switching speeds which make it suitable for high-speed circuits and minimize switching losses. The high transconductance and the low input capacitance help to reduce switching times and reduce circuit delay time. It is also capable of dealing with high-efficiency amplification applications. It has a maximum gate voltage of 10V and a maximum gate current of 100mA.
The SI4941EDY-T1-E3 is designed specifically to be used in power circuits which require large amounts of current, such as DC/DC converters and power amplifiers. It provides extremely high switching speeds, low on-state resistance, and high output current capability. Due to its low threshold voltage, this transistor array is capable of handling very high switching speeds, which results in significant reduction of losses. Its low input capacitance also helps to reduce switching times and reduce circuit delays.
The working principle of the SI4941EDY-T1-E3 is relatively simple. When a suitable voltage is applied to the gate of the device, a voltage-controlled current is generated in the channel of the device. As more voltage is applied, the channel current increases which drives the drain-source voltage of the device to a higher voltage level, resulting in an increase in the device current gain. The device is then used to amplify or vary the gain of the overall circuit.
The SI4941EDY-T1-E3 is a versatile transistor array which can be used in both high-power and low-power applications. It is extremely efficient and provides a high switching speed with a low input capacitance. Due to its low threshold voltage and high transconductance, it minimizes switching times and losses, making it well suited for use in power circuits.
The specific data is subject to PDF, and the above content is for reference
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