SI4906DY-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI4906DY-T1-GE3 is a Field Effect Transistor (FET) Array and one of the more popular FETs on the market. It has multiple uses and a plethora of applications, making it a versatile and reliable component to any design. This article will discuss the applications and working principles of the SI4906DY-T1-GE3.

To begin, the SI4906DY-T1-GE3 is a 5-channel N-type/P-type FET array with source/drain isolation, designed for protecting data bus lines and controlling voltage supply. Unlike other FET Arrays, this one is designed to stay in the linear region during its operation. This means that the SI4906DY-T1-GE3 can be used for low-voltage level shifting applications.

This FET Array is typically used for voltage protection applications, such as for protecting LCD display controllers and resistive touchscreens. It is also useful for preventing short circuits when a device is exposed to voltage surges and other high voltage environments. In some applications, it is also used to power a DC-DC converter, allowing a larger voltage output with more current.

In terms of working principle, the SI4906DY-T1-GE3 works by having a gate voltage applied to its two input terminals. This changes the channel resistance of the FET, which in turn controls the current that can pass through it. When the gate voltage is positive, the channel will be opened, allowing more current to flow through it. Conversely, when the gate voltage is negative, the channel will be closed, reducing the current that passes through it.

The SI4906DY-T1-GE3 is a widely used component, due to its dependability, power efficiency and convenience. Its multiple uses and applications make it a valuable component to many industrial designs. It is an effective way of controlling voltage and protecting data from voltage spikes and surges.

The specific data is subject to PDF, and the above content is for reference