Allicdata Part #: | SI4910DY-T1-GE3TR-ND |
Manufacturer Part#: |
SI4910DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 40V 7.6A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 40V 7.6A 3.1W Surf... |
DataSheet: | SI4910DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Base Part Number: | SI4910 |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 3.1W |
Input Capacitance (Ciss) (Max) @ Vds: | 855pF @ 20V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 6A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.6A |
Drain to Source Voltage (Vdss): | 40V |
FET Feature: | Standard |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI4910DY-T1-GE3 is a complete FET power array based on an innovative IrFET structure. It features an expanding standby current switch, enabling improved efficiency at low power draw rates. The device also provides important power and thermal management features, such as a thermal monitoring system. It boasts a low on-resistance and an excellent thermal dissipation package.
The SI4910DY-T1-GE3 application field is primarily automotive and industrial applications. The automative applications include engine control systems, battery voltage monitoring, and fuel injection control. Industrial applications may include motor control, rectifiers and converters, or any other application requiring high power switching.
The SI4910DY-T1-GE3 is a flexible FET power array that provides excellent power, thermal, and noise management capabilities. It consists of two distinct channels that can be configured independently for each application. The first channel consists of two base-gate-drain transistors that are connected in parallel with an overarching gate-source-drain transistor. The second channel consists of two additional base-gate-drain transistors connected in parallel with an additional gate-source-drain transistor.
The SI4910DY-T1-GE3’s working principle is based on the IrFET structure. The gate-source-drain transistors act like a conventional FET with the gate controlling the conduction, while the base-gate-drain transistors provide additional power by allowing the current to span both channels. The expanding standby current switch allows the device to reduce current draw at lower power levels. In addition, the device features thermal monitoring system that can detect when the ambient temperature rises and reduces power accordingly.
The SI4910DY-T1-GE3 is an excellent example of an innovative FET power array that provides numerous power and thermal management features. In addition to its low on-resistance and excellent thermal dissipation package, the device can be configured to provide power savings even when it is running at low power levels. The device is an excellent choice for automotive, industrial, and other power switching applications.
The specific data is subject to PDF, and the above content is for reference
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SI4910DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 40V 7.6A 8-S... |
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SI4914DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 5.5A 8-S... |
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SI4973DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 5.8A 8-S... |
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SI4922BDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 8A 8-SOI... |
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SI4923DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 6.2A 8-S... |
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