SI4974DY-T1-E3 Allicdata Electronics
Allicdata Part #:

SI4974DY-T1-E3TR-ND

Manufacturer Part#:

SI4974DY-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2N-CH 30V 6A 8-SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 6A, 4.4A 1.1W ...
DataSheet: SI4974DY-T1-E3 datasheetSI4974DY-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Base Part Number: SI4974
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Input Capacitance (Ciss) (Max) @ Vds: --
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.4A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI4974DY-T1-E3 is a high-performance array technology solution for a range of applications. It consists of a series of MOSFET arrays that are designed to work together to maximize performance. It is a reliable, low-cost solution for many applications and offers superior switch matrix complexities that can be beneficial in a variety of situations. This document outlines the applications and working principles of this technology solution.

The SI4974DY-T1-E3 is suitable for high-frequency applications that require a high switching safety margin at low input voltages. It is capable of providing a full array of low-noise and low-loss solutions, making it ideal for a wide range of applications. This product offers fast switching speed, high power efficiency and high reliability. It is a great solution for high-bandwidth applications.

The actual working principle of the SI4974DY-T1-E3 consists of a set of MOSFETs that are designed to work together as an array of energy processing elements. This array is designed with specific geometries that allow for the active element or "shutter" to move rapidly between open and closed positions. The array is designed to provide an impedance mismatch between the various elements, allowing for the highest possible array transfer characteristics with minimal loss. The array works so that when one of the transistors is activated, the remainder of the transistors will turn off allowing the current to drop to its lowest level.

The array of MOSFETs can be used for a variety of applications including noise cancellation, power management, and signal isolation. The array is well suited for high gain applications and provides superior electrical performance between its input and output paths. It is also very low power consuming and provides excellent noise immunity in order to protect sensitive components.

The SI4974DY-T1-E3 array is ideal for a variety of applications including high-bandwidth switching, motor control, audio timescaling, and a variety of other digital control applications. This product offers high current levels that can be achieved with minimal power consumption and noise. Its low internal power dissipation for low power devices makes it the preferred choice for demanding applications.

The SI4974DY-T1-E3 array is a reliable, economical solution that provides low power operation and enhanced performance. Its versatile design makes it well suited for a variety of applications. Its features such as low voltage operation, low noise, high power efficiency, and fast switching speed make it one of the best solutions for many applications. It is particularly well suited for high-bandwidth switching and signal isolation applications.

The specific data is subject to PDF, and the above content is for reference

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