Allicdata Part #: | SI4940DY-T1-E3-ND |
Manufacturer Part#: |
SI4940DY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 40V 4.2A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 40V 4.2A 1.1W Surf... |
DataSheet: | SI4940DY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 4.2A |
Rds On (Max) @ Id, Vgs: | 36 mOhm @ 5.7A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 1.1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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The SI4940DY-T1-E3 is a three-terminal N-Channel MOSFET array designed for switching applications. This device forms an integral part of many electronic systems, allowing for controlled and efficient manipulation of signals and data. By integrating 3 n-channel MOSFET transistors in a single package, this device provides a more efficient and cost-effective solution than using individual transistors.
The SI4940DY-T1-E3 comes in a four-pin DPAK (Dual Package Arranged in the form of a Key) package, which brings all the pins of the device together, making a compact and easy-to-install solution. This device can be used in trade and household electronic equipment, as well as automotive, avionics, and medical applications. Due to its extremely low on-resistance and temperature stability, it is becoming increasingly popular in many power management applications.
Essentially, the SI4940DY-T1-E3 serves as a controlled switch which can be opened and closed by applying a voltage or current to one or more of its pins. When the input voltage is applied, the MOSFETs in the device are turned on, providing a path between the two output pins, thus allowing a current to flow. When the input voltage is cut off, the MOSFETs return to the off-state, blocking the connection between the output pins. This switching element is highly efficient and more cost-effective than other types of switches.
Unlike other transistors, the SI4940DY-T1-E3 offers a faster and more reliable operation than conventional transistors, making it ideal for applications such as mobile phones and medical devices where the highest performance is required. This device has a low on-resistance rating (RDSon) of 17 mOhms, thereby reducing power losses, which results in greater efficiency and higher performance. Moreover, this device is capable of handling high operating temperatures of up to 175C, while providing excellent coverage and reliability.
Due to its ultra-low RDSon, high temperature operation and excellent coverage, the SI4940DY-T1-E3 is becoming increasingly popular in many power management and switching applications. While this device is primarily used in the automotive industry, it is also gaining popularity in mobile phones, tablets, and other portable electronics products. It offers a compact, efficient and cost-effective solution, opening up new opportunities for designers and manufacturers.
The specific data is subject to PDF, and the above content is for reference
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SI4922BDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 8A 8-SOI... |
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