| Allicdata Part #: | SI4922BDY-T1-GE3TR-ND |
| Manufacturer Part#: |
SI4922BDY-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET 2N-CH 30V 8A 8-SOIC |
| More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 8A 3.1W Surfac... |
| DataSheet: |  SI4922BDY-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 1.8V @ 250µA |
| Base Part Number: | SI4922 |
| Supplier Device Package: | 8-SO |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power - Max: | 3.1W |
| Input Capacitance (Ciss) (Max) @ Vds: | 2070pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 62nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 16 mOhm @ 5A, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8A |
| Drain to Source Voltage (Vdss): | 30V |
| FET Feature: | Standard |
| FET Type: | 2 N-Channel (Dual) |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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SI4922BDY-T1-GE3 is a transistor array with an N-channel MOSFET Construction designed for various applications that require high, efficient and reliable power switching performance. It can be used in a wide range of electronic devices, from consumer electronics to automotive electric and industrial power control, with power savings of up to 74%.
SI4922BDY-T1-GE3 is based on the N-channel MOSFET construction. This configuration allows for efficient, fast and reliable switching performance without expending too much power. It also has low on-state resistance and low gate charge values to minimize power consumption, even under high operating voltages. The device has a wide range of operating voltages from 6V to 42V and can handle up to 16 Amps of current. There is a soft-start feature that is included that can reduce in-rush current and improve the system’s overall efficiency.
The device is also designed with overvoltage protection and a low-loss low EMI filter to enable the device to operate with maximum efficiency and reliability. The device can operate at temperatures ranging from -40℃ to +150℃ and has a wide variety of features including a Gate Capacitance Range (CGS), a Gate Resistance Range (RDS), and a Reverse Leakage current (IR). In terms of applications, SI4922BDY-T1-GE3 is ideal for use in automotive and industrial power control, as well as consumer electronics. The device is also suitable for applications that require efficient power switching and to handle high loads with minimal power consumption. Some examples include electric power surge protection, power modules, led drivers, and motor control circuits. This device enables effective and reliable power switching at much lower costs than other alternatives.In terms of working principle, the SI4922BDY-T1-GE3 is designed with its core elements an N-channel mosfet construction, which is the key to their efficient and reliable switching capabilities. This Mosfet construction allows the device to pass current between the source pont and the drain point when an appropriate voltage is applied between the gate and the source. It also allows the device to switch between the on and off states quickly and with minimal power consumption.To summarize, SI4922BDY-T1-GE3 is a transistor array that consists of an N-channel mosfet construction for efficient and reliable switching. The device has a wide range of applications in consumer electronics, automotive and industrial power control, and can handle up to 16A of current. The device also has a low on-state resistance and high gate charge values to minimize power consumption and reduce heat and power losses. Finally the implementation of protection features including the overvoltage protection and low-loss EMI filter enables the device to operate at peak efficiency and reliability.
SI4922BDY-T1-GE3 is based on the N-channel MOSFET construction. This configuration allows for efficient, fast and reliable switching performance without expending too much power. It also has low on-state resistance and low gate charge values to minimize power consumption, even under high operating voltages. The device has a wide range of operating voltages from 6V to 42V and can handle up to 16 Amps of current. There is a soft-start feature that is included that can reduce in-rush current and improve the system’s overall efficiency.
The device is also designed with overvoltage protection and a low-loss low EMI filter to enable the device to operate with maximum efficiency and reliability. The device can operate at temperatures ranging from -40℃ to +150℃ and has a wide variety of features including a Gate Capacitance Range (CGS), a Gate Resistance Range (RDS), and a Reverse Leakage current (IR). In terms of applications, SI4922BDY-T1-GE3 is ideal for use in automotive and industrial power control, as well as consumer electronics. The device is also suitable for applications that require efficient power switching and to handle high loads with minimal power consumption. Some examples include electric power surge protection, power modules, led drivers, and motor control circuits. This device enables effective and reliable power switching at much lower costs than other alternatives.In terms of working principle, the SI4922BDY-T1-GE3 is designed with its core elements an N-channel mosfet construction, which is the key to their efficient and reliable switching capabilities. This Mosfet construction allows the device to pass current between the source pont and the drain point when an appropriate voltage is applied between the gate and the source. It also allows the device to switch between the on and off states quickly and with minimal power consumption.To summarize, SI4922BDY-T1-GE3 is a transistor array that consists of an N-channel mosfet construction for efficient and reliable switching. The device has a wide range of applications in consumer electronics, automotive and industrial power control, and can handle up to 16A of current. The device also has a low on-state resistance and high gate charge values to minimize power consumption and reduce heat and power losses. Finally the implementation of protection features including the overvoltage protection and low-loss EMI filter enables the device to operate at peak efficiency and reliability.
The specific data is subject to PDF, and the above content is for reference
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