SI4936CDY-T1-E3 Allicdata Electronics
Allicdata Part #:

SI4936CDY-T1-E3-ND

Manufacturer Part#:

SI4936CDY-T1-E3

Price: $ 0.19
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2N-CH 30V 5.8A 8SO
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 5.8A 2.3W Surf...
DataSheet: SI4936CDY-T1-E3 datasheetSI4936CDY-T1-E3 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.16808
Stock 1000Can Ship Immediately
$ 0.19
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Base Part Number: SI4936
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.3W
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 40 mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI4936CDY-T1-E3 is a silicon array of N-Channel, enhancement-mode MOSFETs from Vishay Siliconix. This device is designed and built with a DMOS (Double-Diffused Metal-Oxide Semiconductor) technology that is highly reliable, making it the ideal choice for many applications. The SI4936CDY-T1-E3 is available in a small 4-pin SOT-23 package and is suitable for surface-mount technology (SMT).

The SI4936CDY-T1-E3 is a versatile device that can be utilized in a variety of applications including switching, linear control and power supply applications. It is extremely reliable and can operate up to 100mA with a maximum supply voltage of 35 Volts. This device can run at temperatures from -55°C to +150°C, making it highly efficient and able to be utilized in high-temperature environments. The SI4936CDY-T1-E3 has an on-resistance of only 2.6 Ohms and a off-resistance of 200650 MOhm, making it a cost-effective solution for many applications.

The SI4936CDY-T1-E3 is also extremely versatile, due to its low-on resistance and high-off resistance. This device can be used in applications such as switching, linear control, digital logic, relays and protection circuits. Furthermore, it can also be used in power supply and motor control applications, making it an excellent choice for complex applications with large power requirements.

The working principle of the SI4936CDY-T1-E3 is relatively simple. The device consists of two transistors that have their drains connected together. The first transistor has its source connected to the drain of the second transistor, while the second transistor has its source connected to the drain of the first transistor. By selectively providing a voltage to the gates of both transistors, their channels are opened in a way that current can flow from the drain to the source. The amount of current is determined by the voltage applied to the gates of the transistors.

The SI4936CDY-T1-E3 is an excellent choice for a variety of applications, thanks to its highly reliable technology and versatile design. Its low-on resistance makes it suitable for switching and linear control applications, while its high-off resistance makes it suitable for power supply and motor control applications. This device is a cost-effective solution for many applications and can operate at high temperatures, which makes it the ideal choice in many applications.

The specific data is subject to PDF, and the above content is for reference

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