Allicdata Part #: | SI4933DY-T1-E3TR-ND |
Manufacturer Part#: |
SI4933DY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 12V 7.4A 8-SOIC |
More Detail: | Mosfet Array 2 P-Channel (Dual) 12V 7.4A 1.1W Surf... |
DataSheet: | SI4933DY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 500µA |
Base Part Number: | SI4933 |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.1W |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 9.8A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 7.4A |
Drain to Source Voltage (Vdss): | 12V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI4933DY-T1-E3 MOSFET array belongs to a series of power-management products with a variety of features, functions and performance capabilities. This array consists of four single MOSFETs in a single package, and it is designed to meet the growing power efficiency requirements of the modern industry. This array is suitable for a wide range of device and circuit applications.
The working principle of the SI4933DY-T1-E3 is based on the use of four separate MOSFETs that are all connected in parallel in a single package. Each of these MOSFETs has different characteristics to provide different performance capabilities. The maximum power rating of each device is 30W and the breakdown voltage is 28V. The MOSFET array is protected from high voltage and thermal overloads, making it safe and reliable in operation. It is designed for a wide operating temperature range from -40°C to +125°C.
Due to its high power efficiency and low-cost design, the SI4933DY-T1-E3 is ideal for a variety of applications. These include automotive applications such as brushless DC motor control, power line applications, and industrial applications such as LED lighting control, mobile phone charging systems and more. The array can also be used in battery charger applications, general purpose switching applications and a wide range of other electronic circuit applications.
In automotive and industrial applications, the SI4933DY-T1-E3 MOSFET array can be used to provide a power efficient, stable and reliable power source for sensitive electronic components such as microprocessors, sensors and other integrated circuits. It can be used for bidirectional control for brushless motors, allowing the device to be used for either forward or reverse control of the motor. The device can also be used to provide power control for automobile power distribution, radio systems, and home appliance control. In addition, its low-voltage threshold makes it suitable for use in low-voltage, battery-powered applications.
The SI4933DY-T1-E3 MOSFET array is a reliable, cost-effective solution for many applications. Its low-voltage threshold, high power efficiency and wide operating temperature range make it ideal for a variety of applications. Its simple design and low cost make it a cost-effective option for many power management applications.
The specific data is subject to PDF, and the above content is for reference
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SI4913DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 7.1A 8-S... |
SI4914DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 5.5A 8-S... |
SI4933DY-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 12V 7.4A 8-S... |
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SI4972DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 10.8A 8S... |
SI4973DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 5.8A 8-S... |
SI4974DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 6A 8-SOI... |
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SI4963BDY-T1-GE3 | Vishay Silic... | 0.6 $ | 1000 | MOSFET 2P-CH 20V 4.9A 8SO... |
SI4922BDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 8A 8-SOI... |
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