SI4920DY-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI4920DY-T1-GE3-ND

Manufacturer Part#:

SI4920DY-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2N-CH 30V 8-SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 2W Surface Mo...
DataSheet: SI4920DY-T1-GE3 datasheetSI4920DY-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Base Part Number: SI4920
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: --
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.9A, 10V
Current - Continuous Drain (Id) @ 25°C: --
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI4920DY-T1-GE3 is a SuperJunction Metal Oxide Semiconductor Field Effect Transistor (MOSFET) array featuring enhancement-mode transistors that exhibit extremely low on-resistance and fast switching characteristics.

The MOSFET array has several components that must be considered when determining its applications and working principles. Firstly, the device has an isolation layer that isolates the source, drain and substrate of an individual transistor from each other. Secondly, there is an insulated gate electrode, which acts as the control element of each MOSFET unit in the array. This device also features a dielectric isolation layer, which helps reduce capacitive coupling, as well as a copper block for increased thermal performance.

SI4920DY-T1-GE3 offers a wide variety of applications in various industries, including consumer electronics, automotive and medical. In consumer electronics, the MOSFET array is used to power integrated circuits and smartphones. In automotive applications, the device is used to control DC and AC motors, solenoids and actuators. It is also used in medical applications to regulate power to medical sensors, imaging systems and other medical devices.

As far as the working principles of this device are concerned, the process begins when a voltage is applied to the insulated gate of the transistor. This voltage induces a current that flows through the drain-source region, and the current causes a channel to appear beneath the gate. As a result, the channel becomes more conductive, allowing electrons to flow from the source to the drain. This results in an increase in the current carrying capacity, which makes the transistor operate efficiently and quickly.

The internal components of the MOSFET array also help to improve its switches reliability and speed. The array contains a body diode and an output, which protect the device against short-circuits and other unexpected power situations. The device also features a complete protection and level shifting circuit, which provides a more precise switching control. In addition, this combination of features helps to ensure that the MOSFETs in the array are highly reliable and safe while still offering a high level of switching performance.

The highly efficient and robust nature of the SI4920DY-T1-GE3 means that it is suitable for a vast range of applications. The device is suitable for use in a variety of consumer, automotive and medical sectors, due to its low on resistance, fast switching and high reliability. In addition, this MOSFET array also promises better performance than similar devices, meaning that it is ideal for use in a variety of demanding applications.

The specific data is subject to PDF, and the above content is for reference

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