SI4953ADY-T1-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SI4953ADY-T1-GE3CT-ND |
Manufacturer Part#: |
SI4953ADY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 30V 3.7A 8-SOIC |
More Detail: | Mosfet Array 2 P-Channel (Dual) 30V 3.7A 1.1W Surf... |
DataSheet: | SI4953ADY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
Base Part Number: | SI4953 |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.1W |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 53 mOhm @ 4.9A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.7A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
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SI4953ADY-T1-GE3 is a type of field-effect transistor (FET) array that helps to conveniently realize larger and more complex circuits by combining two or more transistors into a single integrated circuit. FETs are devices that control the electrical behavior of transistors by regulating the flow of charge carriers through the device. This type of transistor array is ideal for applications that require fast switching times, low noise, and high frequency performance.
The SI4953ADY-T1-GE3 consists of a package envelope, an alignment layer, a gate oxide layer, a gate electrode, gate frame, contact layers, a source region, and a drain region. The gate electrode controls the current flow through the device by allowing or preventing charge carriers from moving between the source and drain region. The gate oxide layer provides insulation between the gate electrode and the source and drain regions. The gate frame provides protection for the gate oxide layer. The contact layers provide physical connections between the gate electrode and the source and drain regions.
When the SI4953ADY-T1-GE3 is in operation, the flow of current is controlled by the gate electrode. When the gate electrode is positively charged, the electric field created between the gate electrode and the source or drain region attracts mobile charge carriers to the gate region. This allows current to flow through the device. When the gate electrode is negatively charged, the electric field created between the gate electrode and the source or drain region prevents charge carriers from reaching the gate region. This stops current from flowing through the device.
The SI4953ADY-T1-GE3 has many applications in the electronics industry. It can be used to design high-speed, low-noise, and high-frequency analog and digital circuits. It can also be used to design power electronics, switching regulators, and power supplies. Additionally, the device can be used to design communication systems and automotive applications.
In conclusion, the SI4953ADY-T1-GE3 is a very versatile FET array that can be used in many different applications. It is easy to use and provides reliable performance. This type of device is ideal for applications that require fast switching times, low noise, and high frequency performance.
The specific data is subject to PDF, and the above content is for reference
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SI4963BDY-T1-GE3 | Vishay Silic... | 0.6 $ | 1000 | MOSFET 2P-CH 20V 4.9A 8SO... |
SI4922BDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 8A 8-SOI... |
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