SI4992EY-T1-E3

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The SI4992EY-T1-E3 is a N-Channel depletion mode power MOSFET which forms part of the TrenchFET® silicon family from Texas Instruments. This robust component is part of an array of high-performance power FETs designed to meet a range of applications from consumer to industrial and automotive. As an ideal energy-efficient solution for those applications requiring low on-state resistance and high switching frequencies, the SI4992EY-T1-E3 provides very low on-state resistance without the need for extra power supplied to heat sinks.

This particular component is a versatile switch which offers two specific features - a logic-level gate drive and superior antiparallel Diode on a single chip. The logic-level gate drive module presents a large input voltage range, meaning that the switch requires low input voltage and consumes less current, contributing to improved power efficiency. The superior antiparallel diode allows for improved performance in the environment of high surge current, whilst protecting the component from the destructive reverse current in the event of an output short circuit.

Regarding operation, this component requires an appropriate gate voltage level in order to switch between an on-state and an off-state. When the gate voltage exceeds a specific level, the component will switch to the on-state and connect the drain to the source. This will enable current to flow from the drain to the source, at the same time setting the output voltage between the two terminals to a low level. When the gate voltage falls below a predetermined level, it will switch to the off-state and disconnect the drain from the source. In off-state the current from drain to source is blocked, making the SI4992EY-T1-E3 ideal for applications where a low output voltage is required.

In terms of application fields, the SI4992EY-T1-E3 is capable of meeting the requirements for a broad range of applications due to its excellent characteristics. As mentioned, this component is well suited to industries such as the consumer, industrial and automotive segments where a low- or medium-voltage switching device with a low gate voltage is required. It is also especially efficient in applications where low power dissipation is required since it consumes less current when switching compared to regular MOSFETs.

The SI4992EY-T1-E3 is the perfect solution for a range of applications where a low gate voltage and high switching frequencies are required. With a maximum gate-source voltage of 5.5V, its depletion mode N-Channel MOSFET provides excellent performance in areas such as motor control, over-current protection, level-shift integration and power management. Texas Instruments’ TrenchFET silicon family ensures excellent on-state resistance and low power dissipation, with minimal noise, due to its wide input voltage range and superior antiparallel diode.

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