SI4992EY-T1-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SI4992EY-T1-GE3TR-ND |
Manufacturer Part#: |
SI4992EY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 75V 3.6A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 75V 3.6A 1.4W Surf... |
DataSheet: | SI4992EY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Base Part Number: | SI4992 |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power - Max: | 1.4W |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 48 mOhm @ 4.8A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.6A |
Drain to Source Voltage (Vdss): | 75V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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.The SI4992EY-T1-GE3 is part of a family of field effect transistor (FET) arrays with high-speed switching applications. This device is an n-channel FET array consisting of commonly connected drain pins and eight individually addressable source/gate pairs. It also features neat thermal and mechanical integration, low power losses and small-sized switching capacitance. This all helps to provide a wide range of highly integrated applications that exceed the capabilities of many other similar devices.
This device features eight independent n-channel insulated gate field effect transistors which all share the same drain pin. Each of the eight source/gate pairs can be independently addressed by connecting a signal to its individual gate pin. When a positive signal is placed on the signal pin, the FET corresponding to that input is activated and on, allowing current to flow from the drain pin to the source pin. If the signal on the signal pin is changed to a negative signal, then the FET corresponding to that input is then off, blocking any current flow from the drain pin to the source pin.
The main application of the SI4992EY-T1-GE3 is high-speed switching. It provides high switching speeds due to its low on-resistance channel and capacitance. This feature also allows it to efficiently handle power switching applications and to rapidly interrupt or connect current paths. This makes it a great choice for high-speed signal or power switching, or multiplexing.
It is also capable of providing exceptionally low voltage drop due to its low on-resistance. This feature is beneficial for applications like Automatic Identification System (AIS) systems and Resonance Current Balance UPSs that require a low voltage drop. As well as for high efficiency DC-DC conversion applications because of the low power losses it provides.
The SI4992EY-T1-GE3 also offers a wide range of additional benefits. It is capable of handling a temperature range of -40 to +85 degrees Celsius, allowing it to function in extreme temperatures. It also has improved ESD protection and comes in an industry-standard thermal package.
In conclusion, the SI4992EY-T1-GE3 is a highly versatile FET array with a wide range of applications. It offers high-speed switching capabilities, low voltage drop, improved ESD protection, and an operating temperature threshold of -40 to +85 degrees Celsius. These qualities make it a great choice for high-speed power or signal switching, and for applications such as Automatic Identification System (AIS), Resonance Current Balance UPSs and DC-DC conversion applications.
The specific data is subject to PDF, and the above content is for reference
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