SI4940DY-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI4940DY-T1-GE3-ND

Manufacturer Part#:

SI4940DY-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2N-CH 40V 4.2A 8-SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 40V 4.2A 1.1W Surf...
DataSheet: SI4940DY-T1-GE3 datasheetSI4940DY-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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SI4940DY-T1-GE3 is an advanced semiconductor for transistor and Metal Oxide Semiconductor Field Effect Transistor (MOSFET) applications. The device is designed to serve as an array of 24 N-type, source and source drain MOSFETs. This advanced MOSFET array can be used in versatile electronics products.

The ultimate goal of the array is to allow large-scale integrated circuits (ICs) to be integrated into an array that can be selectively enabled or disabled using gate control signals. This array can be used in a wide range of applications, such as power rail protection, power switching, pulse modulation, and noise reduction.

The SI4940DY-T1-GE3 array is fabricated using advanced technology, including modern vapor deposition techniques, feature sizes down to 1.2 microns, and precise siliconization. These features enable the device to offer enhanced performance in a wide range of applications.

The basic working principle behind the SI4940DY-T1-GE3 array is the principle of current mirroring. Each MOSFET in the array has a gate connected to a source and a drain. When the gate is set to ground, the source-drain current flowing through the MOSFET will match its gate current. When the gate is supplied with a positive voltage, the current between its source and drain will be reduced. This allows the array to be switched on or off as needed.

Another working principle of the SI4940DY-T1-GE3 is Gate-Tunnel Technology. The Gate-Tunnel technology utilizes self-aligned gate structures that create a much lower on-resistance than conventional lateral MOSFETs. This technology also improves switching power dissipation and noise reduction.

The SI4940DY-T1-GE3 has found itself a valuable asset in the automotive industry. It has been used as a reliable, cost-effective solution for a wide range of automotive applications, such as surge protection in EV charging infrastructure, automotive batteries and powertrain assemblies. This device is also used in other industrial and commercial applications, such as in uninterruptible power supply (UPS) systems and in solar power systems.

The SI4940DY-T1-GE3 array is a robust, high-performance solution for various electronic applications. This device offers superior performance in a wide range of applications, from power rail protection to power switching and from noise reduction to pulse modulation. Its advanced siliconization process enables seamless integration with a wide range of ICs, making it an ideal choice for a broad range of applications.

The specific data is subject to PDF, and the above content is for reference

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