Allicdata Part #: | SI4940DY-T1-GE3-ND |
Manufacturer Part#: |
SI4940DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 40V 4.2A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 40V 4.2A 1.1W Surf... |
DataSheet: | SI4940DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 4.2A |
Rds On (Max) @ Id, Vgs: | 36 mOhm @ 5.7A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 1.1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
SI4940DY-T1-GE3 is an advanced semiconductor for transistor and Metal Oxide Semiconductor Field Effect Transistor (MOSFET) applications. The device is designed to serve as an array of 24 N-type, source and source drain MOSFETs. This advanced MOSFET array can be used in versatile electronics products.
The ultimate goal of the array is to allow large-scale integrated circuits (ICs) to be integrated into an array that can be selectively enabled or disabled using gate control signals. This array can be used in a wide range of applications, such as power rail protection, power switching, pulse modulation, and noise reduction.
The SI4940DY-T1-GE3 array is fabricated using advanced technology, including modern vapor deposition techniques, feature sizes down to 1.2 microns, and precise siliconization. These features enable the device to offer enhanced performance in a wide range of applications.
The basic working principle behind the SI4940DY-T1-GE3 array is the principle of current mirroring. Each MOSFET in the array has a gate connected to a source and a drain. When the gate is set to ground, the source-drain current flowing through the MOSFET will match its gate current. When the gate is supplied with a positive voltage, the current between its source and drain will be reduced. This allows the array to be switched on or off as needed.
Another working principle of the SI4940DY-T1-GE3 is Gate-Tunnel Technology. The Gate-Tunnel technology utilizes self-aligned gate structures that create a much lower on-resistance than conventional lateral MOSFETs. This technology also improves switching power dissipation and noise reduction.
The SI4940DY-T1-GE3 has found itself a valuable asset in the automotive industry. It has been used as a reliable, cost-effective solution for a wide range of automotive applications, such as surge protection in EV charging infrastructure, automotive batteries and powertrain assemblies. This device is also used in other industrial and commercial applications, such as in uninterruptible power supply (UPS) systems and in solar power systems.
The SI4940DY-T1-GE3 array is a robust, high-performance solution for various electronic applications. This device offers superior performance in a wide range of applications, from power rail protection to power switching and from noise reduction to pulse modulation. Its advanced siliconization process enables seamless integration with a wide range of ICs, making it an ideal choice for a broad range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SI4936BDY-T1-E3 | Vishay Silic... | -- | 15000 | MOSFET 2N-CH 30V 6.9A 8-S... |
SI4925DDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 8A 8-SOI... |
SI4931DY-T1-GE3 | Vishay Silic... | -- | 27500 | MOSFET 2P-CH 12V 6.7A 8SO... |
SI4909DY-T1-GE3 | Vishay Silic... | -- | 12500 | MOSFET 2P-CH 40V 8A 8SOMo... |
SI4925BDY-T1-E3 | Vishay Silic... | -- | 20000 | MOSFET 2P-CH 30V 5.3A 8-S... |
SI4946BEY-T1-E3 | Vishay Silic... | -- | 12500 | MOSFET 2N-CH 60V 6.5A 8-S... |
SI4946BEY-T1-GE3 | Vishay Silic... | -- | 12500 | MOSFET 2N-CH 60V 6.5A 8-S... |
SI4900DY-T1-E3 | Vishay Silic... | -- | 15000 | MOSFET 2N-CH 60V 5.3A 8-S... |
SI4943BDY-T1-E3 | Vishay Silic... | -- | 5000 | MOSFET 2P-CH 20V 6.3A 8-S... |
SI4904DY-T1-GE3 | Vishay Silic... | 0.78 $ | 7500 | MOSFET 2N-CH 40V 8A 8-SOI... |
SI4904DY-T1-E3 | Vishay Silic... | -- | 5000 | MOSFET 2N-CH 40V 8A 8-SOI... |
SI4936CDY-T1-GE3 | Vishay Silic... | 0.53 $ | 11324 | MOSFET 2N-CH 30V 5.8A 8-S... |
SI4963BDY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 4.9A 8-S... |
SI4943CDY-T1-GE3 | Vishay Silic... | -- | 2500 | MOSFET 2P-CH 20V 8A 8-SOI... |
SI4946CDY-T1-GE3 | Vishay Silic... | 0.29 $ | 2500 | MOSFET N-CHAN DUAL 60V SO... |
SI4900DY-T1-GE3 | Vishay Silic... | 0.41 $ | 2500 | MOSFET 2N-CH 60V 5.3A 8-S... |
SI4922BDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 8A 8-SOI... |
SI4936CDY-T1-E3 | Vishay Silic... | 0.19 $ | 1000 | MOSFET 2N-CH 30V 5.8A 8SO... |
SI4914BDY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 8.4A 8-S... |
SI4914BDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 8.4A 8-S... |
SI4932DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 8A 8-SOI... |
SI4916DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 10A 8-SO... |
SI4925BDY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 5.3A 8-S... |
SI4963BDY-T1-GE3 | Vishay Silic... | 0.6 $ | 1000 | MOSFET 2P-CH 20V 4.9A 8SO... |
SI4936ADY-T1-GE3 | Vishay Silic... | 0.69 $ | 1000 | MOSFET 2N-CH 30V 4.4A 8-S... |
SI4943BDY-T1-GE3 | Vishay Silic... | 0.72 $ | 1000 | MOSFET 2P-CH 20V 6.3A 8-S... |
SI4920DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 8-SOICMo... |
SI4942DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 40V 5.3A 8-S... |
SI4906DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 40V 6.6A 8-S... |
SI4910DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 40V 7.6A 8-S... |
SI4913DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 7.1A 8-S... |
SI4947ADY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 30V 3A 8-SOI... |
SI4953ADY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 3.7A 8-S... |
SI4992EY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 75V 3.6A 8-S... |
SI4908DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 40V 5A 8-SOI... |
SI4920DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 8-SOICMo... |
SI4923DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 30V 6.2A 8-S... |
SI4923DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 30V 6.2A 8-S... |
SI4933DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 12V 7.4A 8-S... |
SI4940DY-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 40V 4.2A 8-S... |
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...
MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...
MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...
MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...
MOSFET 2N-CH 56LFPAKMosfet Array
MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...