SI4931DY-T1-GE3 Discrete Semiconductor Products

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An application field and working principle of SI4931DY-T1-GE3 transistors include the ability to combine two different MOSFETs in order to create one larger current drive than either transistor alone could supply. This component, a N-Channel MOSFET RF Power Amplifier Array, is also highly configurable and is capable of incredible output power.

The SI4931DY-T1-GE3 transistors have a peak current rating of 1,800 amp (A) and a peak drain voltage of 120 VDC. It is designed for a maximum output power of 2,100 watts (W). This power amplifier is well-suited for high-efficiency applications such as EMC testing and antenna systems.

In its basic configuration, the SI4931DY-T1-GE3 is a MOSFET transistor array with two N-type elements. It features two drain electrodes and two gate electrodes. The gate electrodes are connected together, while the drain electrodes are connected to two externally-connected output pins.

The array configuration of the SI4931DY-T1-GE3 allows it to achieve a high current drive and power output. This is due to the fact that the two MOSFETs act cooperatively, allowing each MOSFET to draw on the current and voltage available to the other. As a result, the combined current drive will be greater than the current drive of either transistor alone.

The SI4931DY-T1-GE3 is extremely efficient, providing excellent quality output power. It is capable of producing up to 10 watts of output power when running from a 12V supply, and up to 2,100 watts of output power when operating from a 120V supply. This makes it ideal for applications that require greater power than can be obtained from a single MOSFET.

The SI4931DY-T1-GE3 also features an adjustable current load that can be used to adjust the amount of current drive available. This adjustable load allows the user to fine-tune the output power level and to optimize the amplifier’s performance to the requirements of the application.

In addition, the SI4931DY-T1-GE3 offers a variety of safety features that make it suitable for use in mission-critical applications. These include a built-in thermal shutdown circuit, ESD protection, and reverse polarity protection.

Overall, the SI4931DY-T1-GE3 is an excellent choice for applications that require high current drive and power output. Its combination of high efficiency and reliable operation make it ideal for a variety of applications, including EMC testing, antenna systems, and many other high-power applications.

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