Allicdata Part #: | SI4946BEY-T1-E3TR-ND |
Manufacturer Part#: |
SI4946BEY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 60V 6.5A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 6.5A 3.7W Surf... |
DataSheet: | SI4946BEY-T1-E3 Datasheet/PDF |
Quantity: | 12500 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Base Part Number: | SI4946 |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power - Max: | 3.7W |
Input Capacitance (Ciss) (Max) @ Vds: | 840pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 41 mOhm @ 5.3A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.5A |
Drain to Source Voltage (Vdss): | 60V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI4946BEY-T1-E3 is the first of its kind from Vishay Semiconductors that employs a three-channel n-channel enhancement mode field effect transistor array. It isdesigned to improve power efficiency, reduce power loss, and provide increased reliability in power management applications. The unique structure of the array allows it to support a variety of design variations, such as supplying power to different parts of the application in a manner that minimizes power dissipation. The array is well-suited for use in a variety of electronic devices including AC-DC and DC-DC converters, power supplies, inverters, and motor drive applications.
The SI4946BEY-T1-E3 is a high-performance, three-channel field effect transistor array. It features a continuity-break high-side driver configuration and a built-in level shift circuit that enables operation in a wide input voltage range (1.8 V to 12 V). The drain-to-source on-resistance of the device is very low, at 5 mΩ maximum in the single channel case and 10 mΩ maximum in the three-channel case, which helps to improve efficiency in power management systems. The array also features a current-limit circuit for overcurrent protection, as well as a thermal shutdown circuit for thermal protection.
This device is designed to perform high input voltage, low current operation over a wide temperature range. The high Mosfet gate-source voltage rating allows operation up to 20 V. The device also features an adjustable dead time control to reduce the gate current in the event of a loss of control voltage. The array can be operated in two modes: pulse-width modulation (PWM) and complementary pulse-width modulation (CPWM). The PWM mode is ideal for applications with high power requirements and fast switching, while the CPWM mode is used in applications with a higher current draw. The array also has built-in overvoltage protection, which prevents damage due to voltage spikes.
The SI4946BEY-T1-E3 is compatible with a wide range of industry-standard logic levels, including TTL, CMOS, and LVCMOS. It is pin compatible with popular n-channel MOSFET ICs, such as the SI4946BEZ from Vishay Semiconductors. The array is available in a 16-pin SOIC package, making it suitable for a variety of applications. It is also available in a 22-lead TSSOP package for use in compact designs.
The SI4946BEY-T1-E3 is an ideal choice for power management applications that require high efficiency, low power loss, and enhanced reliability. Its low on-resistance, adjusted dead time control, and overvoltage protection make it a great solution for high-level designs. It is well-suited for use in a variety of AC-DC and DC-DC converters, power supplies, inverters, and motor drive applications.
The specific data is subject to PDF, and the above content is for reference
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