SI4948BEY-T1-GE3

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The SI4948BEY-T1-GE3 is a type of transistor array that is more specifically a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a highly integrated array which includes 12-individually controlled Non-Overlap (NOVR) enhancement-mode MOSFETs with a miniature package. In comparison to normal MOSFETs, the SI4948BEY-T1-GE3 has much higher efficiency and is capable of providing low output impedance, high input impedance and superior ESD performance.

The SI4948BEY-T1-GE3 is typically used in power management, motor and solenoid control, and RF switching applications. It also finds uses as an actuator or a switch in various industrial, mobile, networking, storage, and consumer applications. The SI4948BEY-T1-GE3 is also useful in reversing the direction of current flow, allowing the device to easily drive inductive loads.

The SI4948BEY-T1-GE3 works on the principle of having two terminals, the gate and the source. It basically works on the same principle as a regular transistor, with the added bonus of being able to control larger voltage signals. To control this device, a gate charge is sent through the gate, which is also connected to the source. This charge then causes a change in the signal on the source, which is then transferred to the drain, thus causing the desired change in current or voltage.

The SI4948BEY-T1-GE3 is designed for use in a wide range of operating temperature ranges ranging from -55°C to +150°C with a maximum junction temperature rating of +175°C. Additionally, it features a maximum gate-source voltage of ±20V, and a maximum drain-source voltage of ±30V. It also features an extremely low on-resistance of 9 mΩ and a maximum continuous drain current of 8 A, making it an ideal choice for power management applications.

The device has a minimum total gate charge of 3 nC and a maximum total gate charge of 12 nC. It also features a minimum drain-source on-state resistance of 9 mΩ and a maximum of 27 mΩ, making it a very efficient device. This device also has a maximum drain-source diode forward voltage drop of 1.4 V, and a maximum drain-source diode reverse recovery time of 1.5 ns.

The SI4948BEY-T1-GE3 is an extremely efficient and reliable device that can be used in a variety of applications, ranging from power management to RF switching. With its array of features, it makes an ideal choice for an array of applications. Its low total gate charge and low drain-source on-state resistance make it a very efficient device, while its maximum junction temperature rating and maximum voltage ratings make it a reliable device.

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