SI4966DY-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI4966DY-T1-GE3-ND

Manufacturer Part#:

SI4966DY-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2N-CH 20V 8SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 20V 2W Surface Mo...
DataSheet: SI4966DY-T1-GE3 datasheetSI4966DY-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SI4966
Description

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The SI4966DY-T1-GE3 is a voltage-controlled FET (Field Effect Transistor). This device is a four-FET array in a single package, with the gates of each FET included in the package. This array can be configured in a variety of ways to allow for different functions, including logic circuits, amplifiers and signal conditioning. The FETs in the package do not need to be individually incorporated into the circuit; instead, the circuits can be structured around the FET array as a whole.

Working principle

At the heart of the FET Array is the FET itself which is a three terminal device. The source, drain and gate electrodes are used to control the current flow. The amount of current flowing through the FET depends on the voltage applied to the gate. When the gate voltage goes below a certain threshold a majority of current cannot pass, while when the gate voltage goes above the threshold the current flow increases.

The FET array contains four FETs in a single package that are connected in various configurations depending upon the application. The array structure allows for the combining of the individual FETs capabilities into a single package. They are often configured as complimentary complementary-symmetry pairs, meaning each of the two halves of the FET array contains two FETs with opposing characteristics.

Application Field

The SI4966DY-T1-GE3 FET Array can be used in many different fields, from signal processing to communications. For example, it can be used in an audio amplifier output stage to provide a high power output while maintaining linear performance. It can also be used in digital signal processors to condition signals and reduce noise. Other applications include voltage-controlled oscillators and frequency synthesizers, logic gates and memory circuits.

The SI4966DY-T1-GE3 FET Array is a versatile device that can be used in many different types of circuits. Its small size and low power consumption make it ideal for portable electronics. Its ability to be configured in different ways allows for numerous potential uses. For these reasons and more, it is an important part of many modern electronics systems.

The specific data is subject to PDF, and the above content is for reference

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