SI7196DP-T1-E3

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The SI7196DP-T1-E3 is a high-performance logic-level enhancement mode field-effect transistor (MOSFET) which is ideally suited for variable speed motor control applications. The device employs an advanced patented trench DMOS technology that combines low RDS(on) with superior avalanche energy ratings and excellent temperature and gate charge characteristics. Its low on-state resistance enables high efficiency and its high avalanche energy ratings make it suitable for medium reliability applications.

The SI7196DP-T1-E3 can be used in a wide range of applications including motor control, power switching and lighting control. It excels in switching applications due to its low threshold voltage, which can reduce the gate drive requirements. It can also be used for higher current motor control applications such as air conditioners, washing machines and electric pumps.

The SI7196DP-T1-E3 has a drain to source voltage of 60 volts (VDS), a drain current of 8 amperes (ID), a gate to source voltage of 10 volts (VGS), an on-resistance of 0.052 ohms (RDS(ON)) at 10 volts, and a total gate charge of 38 nano-coulombs (Qg). The device is housed in a TO-220AB package and is RoHS compliant.

The SI7196DP-T1-E3 is designed to reduce switching losses in high-side and low-side power devices. It is capable of high speed switching frequency, allowing it to be used in high-frequency inverters. The low gate threshold voltage and gate charge allow it to work well with low gate drive current and low gate voltage. The device also has a low output capacitance, which can reduce the ringing and overshoot in power switching applications.

The operation of the SI7196DP-T1-E3 is based on the principles of MOSFET technology. In its most basic form, the MOSFET is a three-terminal device consisting of a source, gate and drain. A voltage applied to the gate terminal produces an electric field in the channel between the source and drain, which modulates the flow of current. This is controlled by the amount of voltage applied to the gate, which is proportional to the charge on the gate.

The SI7196DP-T1-E3 features a self-aligning N-type DMOS structure that consists of a deep trench, which is filled with a gate oxide and is depleted of electrons. This structure along with the P-type body forms the N-type field-effect channel. The device is self-protected by the high avalanche energy ratings and the low drain-to-body diodes. The advanced trench technology also ensures lower on-resistance while maintaining a high switching speed.

The SI7196DP-T1-E3 is ideal for a range of applications in motors, lighting and power switching. It has low on-resistance and high avalanche energy ratings, making it ideal for medium reliability applications. The low gate threshold voltage and gate charge allow it to work well with low gate drive current and low gate voltage, while the high switching frequency allows it to be used in high frequency inverters. The device is also RoHS compliant and housed in a TO-220AB package.

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