Allicdata Part #: | SI7156DP-T1-E3-ND |
Manufacturer Part#: |
SI7156DP-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 40V 50A PPAK SO-8 |
More Detail: | N-Channel 40V 50A (Tc) 5.4W (Ta), 83W (Tc) Surface... |
DataSheet: | SI7156DP-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 5.4W (Ta), 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6900pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 155nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 3.5 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI7156DP-T1-E3 is part of a family of N-channel MOSFETs with the same logic level threshold voltage (Vth). This particular variation of the MOSFET has an exceptionally low 5V gate threshold voltage. It is commonly used in power switch applications, including buck and boost converters, as well as noise-sensitive equipment such as high-end audio amplifiers. This MOSFET is also impressive because of its smaller size and low on-resistance.
The MOSFET’s working principle is based on the physical properties that generate current when a voltage is applied across two regions. It works by employing a gate to control the current, which is done by a set voltage. This voltage is adjustable for the purpose of controlling current, voltage and other parameters.
The SI7156DP-T1-E3 MOSFET is suitable for a variety of applications, including switching, motor control, and high-power LED applications. The lower gate threshold voltage of the device allows it to be used in applications ranging from automotive power switches to audio power amplifiers. It is also used in cell phone chargers, solar charge controllers, switching/buck regulator controllers, and other high power applications.
The SI7156DP-T1-E3 has lower gate threshold voltage and on-resistance than previous models, allowing the device to be used in a range of applications. The device also has an impressive withstand voltage rating and thermal resistance, making it suitable for high-power and high-voltage applications. This device is also protected from electrostatic discharge, making it a reliable and reliable choice for sensitive and critical applications.
The SI7156DP-T1-E3 is a great choice for those seeking a reliable, efficient, and cost-effective MOSFET. It can be used to control current, voltage, and other parameters. The device’s low gate threshold voltage and high withstanding voltage ratings make it a great choice for sensitive applications. The device’s small size and low on-resistance make it suitable for high-power applications, while the ESD protection ensures reliable operation.
The SI7156DP-T1-E3 is an ideal MOSFET choice for those seeking a reliable, efficient, and cost-effective solution. Its low gate threshold voltage, high withstanding voltage ratings, small size and low on-resistance make it suitable for a range of applications, making it an excellent choice for those looking for a reliable and reliable power switch.
The specific data is subject to PDF, and the above content is for reference
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