SI7190ADP-T1-RE3

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	5W (Ta), 56.8W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	860pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	22.4nC @ 10V
Series:	ThunderFET®
Rds On (Max) @ Id, Vgs:	102 mOhm @ 4.3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	7.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	4.3A (Ta), 14.4A (Tc)
Drain to Source Voltage (Vdss):	250V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction of SI7190ADP-T1-RE3

SI7190ADP-T1-RE3 is a high-performance, high-frequency, high-voltage, low-voltage, single MOSFET transistor, which is used in a wide range of applications, such as consumer electronics, automotive, industrial, and telecommunications. It is specifically designed to work in challenging environments where high-power, high-efficiency and high-reliability are essential.

Application Field

The SI7190ADP-T1-RE3 is suitable for a variety of power applications and is designed to operate in a wide voltage range from 5V to 100V. It is a high-current transistor that can be used for power management and high power applications, such as motor control, power switching and switching power supplies. The transistor is suitable for switch-mode power supplies and pulse width modulation applications, as it offers superior efficiency and low EMI/Radio Frequency Interference (RFI). It provides excellent thermal performance and can be used in power modules, LED lighting, automobiles, and other applications.

Advantages

The SI7190ADP-T1-RE3 has several advantages compared to traditional transistors. It has low forward voltage drop, fast switching speed, and low gate charge. This allows the transistor to operate at higher currents and higher frequencies. It also offers a high current density, which means it can handle more power in a smaller area.The transistor has a low output conducting resistance and can operate at high temperature with excellent thermal performance. Its low parasitic capacitance increases the overall efficiency of the circuit, as it reduces the power dissipation. The device also has a high surge current capability and is capable of handling high-current spikes.

Working Principle

The SI7190ADP-T1-RE3 is a single MOSFET transistor, which is based on the concept of channel enhancement. A MOSFET (metal–oxide–semiconductor field-effect transistor) is a type of transistor that uses an electrically conductive gate electrode to control the conductivity of a semiconductor channel. The SI7190ADP-T1-RE3 utilizes a dielectric barrier between the gate and the drain, which increases the gate-to-source voltage (VGS) and decreases the drain-to-source voltage (VDS). The increased voltage between the gate and the drain creates an electric field within the channel, which then controls the flow of electrons through the transistor. The SI7190ADP-T1-RE3 is an enhancement-type MOSFET, which means that it requires a higher gate voltage than other types of MOSFETs to operate. When the gate voltage is applied, electrons are attracted toward the gate electrode and form a conducting channel between the source and the drain. This conducting channel enables the flow of electrons through the device and allows for switching current between the drain and the source. The voltage between the gate and the drain (VGS) determines the current that can flow through the transistor. When the voltage between the gate and the drain reaches the threshold voltage (VTH), the device becomes saturated and no more current can flow.

Conclusion

The SI7190ADP-T1-RE3 is a high-performance, high-frequency, high-voltage, low-voltage, single MOSFET transistor, which is designed for use in a variety of power applications. Its superior features, such as low forward voltage drop, fast switching speed, and low gate charge make it an ideal choice for power management and high-power applications. The transistor works on the principle of channel enhancement, which requires a higher voltage between the gate and the drain to function properly. With its wide range of applications and excellent performance, SI7190ADP-T1-RE3 is a reliable and efficient device for any power application.

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