Allicdata Part #: | SI7120DN-T1-GE3CT-ND |
Manufacturer Part#: |
SI7120DN-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 6.3A 1212-8 |
More Detail: | N-Channel 60V 6.3A (Ta) 1.5W (Ta) Surface Mount Po... |
DataSheet: | SI7120DN-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | PowerPAK® 1212-8 |
Supplier Device Package: | PowerPAK® 1212-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 19 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.3A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
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The SI7120DN-T1-GE3 is a type of single transistor FET specifically designed to meet the needs of various applications that demand regulated power management. It is a N-channel enhancement mode Field-Effect Transistor (FET) featuring an ultra-low threshold voltage, providing industry-leading ON resistance–2.2 Ω. The transistor is an ideal choice for dc-dc converters, and other digital power applications.
One of the most important characteristics of the SI7120DN-T1-GE3 is that it has an extremely low on-resistance when switched on. This means that it can allow a much smaller amount of current to pass from the collector to the drain compared to other FETs. This results in higher efficiency and therefore improved power utilization when the transistor is used in digital power applications.
The working principle of a field-effect transistor (FET) is based on the scientific principle of a p-n junction, which is also known as an Electric Field Effect Transistor (EFET). This principle is based on the phenomenon that when electrons flow through a material, their movement is affected by an electric field. This electric field affects the movement of the electrons, and in turn impacts the amount of current that passes through the material. This is the principle upon which the SI7120DN-T1-GE3 is built.
The SI7120DN-T1-GE3 transistor is usually used as a switch, controlling and regulating power in various applications. When this transistor is activated, the electrons flow from the collector to the drain, allowing for the passage of current. The amount of current that can pass through will depend on the drain-to-source voltage. The higher the voltage that is applied, the more electrons will flow. At the same time, the ON resistance will remain low, providing improved performance.
Due to its unique characteristics, the SI7120DN-T1-GE3 is ideal for applications that require digital power management. It can be used in dc-dc converters, engine controllers, and digital TVs, among many other applications. The transistor is also popular in motor control applications. It has been used in AC and brushless DC motor drives, and in rail controllers, among many other types of motor controllers.
The SI7120DN-T1-GE3 offers many benefits over traditional transistors, such as its ultra-low on-resistance and its ability to provide precise control of power in digital applications. This makes it an ideal choice for a wide variety of applications. Its compact size makes it well-suited for designs with limited space.
The specific data is subject to PDF, and the above content is for reference
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