SI7117DN-T1-E3 Allicdata Electronics
Allicdata Part #:

SI7117DN-T1-E3TR-ND

Manufacturer Part#:

SI7117DN-T1-E3

Price: $ 1.76
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 150V 2.17A 1212-8
More Detail: P-Channel 150V 2.17A (Tc) 3.2W (Ta), 12.5W (Tc) Su...
DataSheet: SI7117DN-T1-E3 datasheetSI7117DN-T1-E3 Datasheet/PDF
Quantity: 9000
1 +: $ 1.76000
10 +: $ 1.70720
100 +: $ 1.67200
1000 +: $ 1.63680
10000 +: $ 1.58400
Stock 9000Can Ship Immediately
$ 1.76
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 12.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.17A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI7117DN-T1-E3 is a single, advanced monolithic HEXFET power MOSFET from Vishay Semiconductor. It is an N-channel device, which features high density cell construction, an advanced chemistry, and superior processing techniques that result in a low on-resistance per unit area. The SI7117DN-T1-E3 also features an industry-leading threshold voltage of only 1V and is capable of handling currents up to 8A.

The SI7117DN-T1-E3 is designed for use in a variety of applications including powering applications such as digital power supply, DC/DC converters, automotive, and switch mode power supplies. The SI7117DN-T1-E3 can also be used to control the on/off state of devices such as semiconductor devices, transistors, switches, motors, and other devices.

The working principle of the SI7117DN-T1-E3 is based on the use of a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). A MOSFET is essentially a combination of a metal oxide and a gate electrode. When voltage is applied to the gate, electrons from the metal oxide are attracted to it and form a channel. This channel serves as a switch and allows current to flow from the drain to the source. The SI7117DN-T1-E3 features a low threshold voltage and high-density cells, which increase the flow of current and improve its performance.

The SI7117DN-T1-E3 also features a high-temperature tolerance and is capable of withstanding temperatures up to 175°C, which makes it suitable for use in areas where temperature is a concern. Furthermore, the SI7117DN-T1-E3 is RoHS compliant, meaning that it adheres to the Restriction of Hazardous Substances Directive and is thus safe for use in the environment.

The SI7117DN-T1-E3 is also available in different packages, such as PDIP, SSO, and SOT-223. This allows for easy design integration into circuits and increases the chances of finding a compatible device for a given application.

The SI7117DN-T1-E3 is an excellent choice for a wide range of applications and is a great choice for designers looking for a reliable and efficient power MOSFET. It is extremely reliable and efficient, has an industry-leading threshold voltage, is highly tolerant to temperature, and is RoHS compliant. The SI7117DN-T1-E3 is a great option for designers looking for a reliable, efficient, easy to implement and affordable solution for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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