Allicdata Part #: | SI7155DP-T1-GE3TR-ND |
Manufacturer Part#: |
SI7155DP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CHAN 40V POWERPAK SO-8 |
More Detail: | P-Channel 40V 31A (Ta), 100A (Tc) 6.25W (Ta), 104W... |
DataSheet: | SI7155DP-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 6.25W (Ta), 104W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 12900pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 330nC @ 10V |
Series: | TrenchFET® Gen III |
Rds On (Max) @ Id, Vgs: | 3.6 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 31A (Ta), 100A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI7155DP-T1-GE3 is a high-performance single-channel MOSFET transistor commonly used for a wide range of applications. It is capable of operating with supply voltages ranging from 3V to 6V and can handle a maximum of 65mA. The device has been designed to be used in high-noise environments and can provide low-noise operation. It also has low gate-to-source capacitance which ensures fast switching times. One of the advantages of the SI7155DP-T1-GE3 is its extremely low on-resistance which helps to minimize power consumption. Furthermore, the MOSFET provides excellent ESD protection, making it a suitable choice for applications involving electrostatic discharges.
The most fundamental use of the SI7155DP-T1-GE3 is as an amplifier, where it is used to control the flow of current between two points in an electronic circuit. The MOSFET transistor is typically used in complex applications, including embedded systems, telecommunication, audio, and video applications. In these applications, the MOSFET transistor serves as a voltage regulator, current limiter, and signal modulator. Another common application is in high-power applications such as power supplies, motor drives, LED lighting, and digital control systems.
The SI7155DP-T1-GE3 is a single-channel MOSFET transistor; this means that it is made up of just one channel or layer of semiconductor material. It works by controlling the flow of current between two terminals by altering the voltage applied to its gate. When a positive voltage is applied to the gate, the MOSFET opens and allows the current to flow between the source and the drain. When a negative voltage is applied to the gate, the MOSFET closes, blocking the current between the source and the drain. The voltage applied to the gate determines the resistive state of the transistor, allowing for precise control of current flow.
The SI7155DP-T1-GE3 is an ideal choice for applications that require fast switching, low power consumption, and high ESD protection. It is used in a variety of applications, including low-noise amplifiers, voltage regulators, ESD safe circuits, and power supply designs. The device also offers low gate-to-source capacitance which ensures fast switching times and low power consumption.
The SI7155DP-T1-GE3 single-channel MOSFET transistor is a versatile device that can be used in a variety of applications. Its high performance and low cost make it a great option for designers looking for a reliable and efficient component for their designs. It is available in a variety of packages, including SOIC and DIP, making it easy to incorporate into most applications.
The specific data is subject to PDF, and the above content is for reference
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