Allicdata Part #: | SI7136DP-T1-E3TR-ND |
Manufacturer Part#: |
SI7136DP-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 20V 30A PPAK SO-8 |
More Detail: | N-Channel 20V 30A (Tc) 5W (Ta), 39W (Tc) Surface M... |
DataSheet: | SI7136DP-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 5W (Ta), 39W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3380pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 78nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Description
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The SI7136DP-T1-E3 is one of many types of field-effect transistors (FETs) available on the market. It belongs to a class of transistors known as metal-oxide-semiconductor FETs (MOSFETs), which are characterized by their ability to control current with a small input voltage. In particular, the SI7136DP-T1-E3 is a single MOSFET, meaning that it contains a single gate, drain, and source. The main application of the SI7136DP-T1-E3 is as a power switch in motor control applications. Specifically, it can be used to control the on/off state of a motor by supplying a voltage to its gate through an external controller. This is preferable to using a mechanical switch in motor control applications, as it is much more efficient and reliable.With respect to its working principle, the SI7136DP-T1-E3 uses a small control voltage to control the flow of current from its source to its drain. When the voltage applied to its gate is low, current will not flow from the source to the drain. However, when the voltage applied to its gate is increased, a current channel is formed that allows current to flow from the source to the drain.The SI7136DP-T1-E3 is also characterized by its low on-resistance (RON) and low total gate charge (Qg). The low RON ensures that it does not dissipate too much energy in the form of heat, making it more energy efficient. The low Qg also makes it more efficient, as it requires less energy to charge and discharge the gate.Overall, the SI7136DP-T1-E3 is a highly reliable and efficient power switch and is ideal for motor control applications. Its low RON and low Qg also ensure that it is energy efficient and able to switch rapidly in order to quickly change the state of a motor. As such, it is an excellent choice when it comes to controlling motor currents in a variety of industrial, automotive, and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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