Allicdata Part #: | SI7136DP-T1-GE3-ND |
Manufacturer Part#: |
SI7136DP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 20V 30A PPAK SO-8 |
More Detail: | N-Channel 20V 30A (Tc) 5W (Ta), 39W (Tc) Surface M... |
DataSheet: | SI7136DP-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 5W (Ta), 39W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3380pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 78nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI7136DP-T1-GE3 is a logic-level N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). As a member of the SI7 Series of Gold Power MOSFETS, it is designed to offer enhanced performance in small board-space applications. This power MOSFET is optimized and designed for use in power management applications with low gate threshold, low on-state resistance, and thermal management capability, as well as long-term business and product reliability and stability. In addition, it has dynamic performance in medium to low power applications.
Application field
The SI7136DP-T1-GE3 is most commonly used for medium to low power switching applications. It can be used as a switch for a wide range of applications. For example, it can be used for a range of AC and DC motor control applications in automotive, industrial, and home appliances. It can also be used for remote power switching and control. Other applications in which this MOSFET is commonly used are speed controls, toys, over-current protection, and battery life management.
Working Principle
The SI7136DP-T1-GE3 is an N-Channel MOSFET with a logic level gate threshold. It has a VGS(th) voltage of 1.8V, and a maximum RDS(on) value of 0.012 Ω. When the gate voltage is below VGS(th), the MOSFET is in the off-state, i.e., no current is flowing between the source and drain. When the gate voltage is higher than VGS(th), the MOSFET is in the on-state and current can now flow. The current is regulated by the RDS(on), which acts like a valve, where a larger RDS(on) causes less current to flow and vice versa.
The SI7136DP-T1-GE3 power MOSFET also features a low-inductance topology. It has an integrated protection diode which prevents short-circuits and thermal overloading. It also has an integrated-heat sink which improves thermal performance and makes the chip more durable over time.
Conclusion
The SI7136DP-T1-GE3 is a logic-level N-Channel MOSFET with enhanced performance in small board-space applications. It can be used for medium to low power switching applications such as AC and DC motor control, remote power switching and control, speed controls, toys, over-current protection, and battery life management. It has a VGS(th) voltage of 1.8V, and a maximum RDS(on) value of 0.012 Ω. It also features a low-inductance topology, integrated protection diode which prevents short-circuits, and an integrated-heat sink which improves thermal performance.
The specific data is subject to PDF, and the above content is for reference
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