SIR401DP-T1-GE3 Allicdata Electronics

SIR401DP-T1-GE3 Discrete Semiconductor Products

Allicdata Part #:

SIR401DP-T1-GE3TR-ND

Manufacturer Part#:

SIR401DP-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 20V 50A PPAK SO-8
More Detail: P-Channel 20V 50A (Tc) 5W (Ta), 39W (Tc) Surface M...
DataSheet: SIR401DP-T1-GE3 datasheetSIR401DP-T1-GE3 Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 39W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 9080pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SIR401DP-T1-GE3 chip is an integrated circuit that can be used in a variety of sensing and control applications. It is of particular value in applications requiring high accuracy, high performance, and low power dissipation. The chip consists of a high-voltage field effect transistor (FET) and two junction field effect transistors (JFETs) integrated in a single package. It is designed for use in a wide range of applications such as position sensing, temperature control, and current sensing.

The SIR401DP-T1-GE3 is designed to operate in a high-voltage field effect transistor (FET) configuration. This configuration allows it to accurately control the movement of electrons or holes in a semiconductor device. It is manufactured for high-vacuum operations, meaning it is suitable for applications where high accuracy and precise control of the device is critical.

The SIR401DP-T1-GE3 is optimized for use in sensing and control applications due to its reliability and low power consumption. It is a highly reliable device, capable of maintaining its accuracy and performance even under the most extreme environmental conditions. Its low power consumption makes it ideal for use in battery-powered applications. It also has a low gate voltage threshold and is able to operate off of a low gate voltage source.

The principle of operation of the SIR401DP-T1-GE3 is based on the transfer of information between two conducting materials. One material is the substrate upon which the device is built, while the other is a gate voltage applied to the substrate. As the gate voltage changes, the majority charge carrier of the substrate changes accordingly. This change in majority charge carrier creates an electric field that is capable of controlling the flow of electrons in the device. In this way, the device can be used for a variety of sensing and control functions.

The SIR401DP-T1-GE3 is highly reliable and is capable of maintaining its performance even under extreme environmental conditions. It is also very low power and suitable for use in battery-powered applications, making it an ideal choice for a variety of sensing and control applications. The integrated circuitry of the device is capable of producing highly accurate data and can be used for accurately measuring and controlling temperature, pressure, current, and position.

The specific data is subject to PDF, and the above content is for reference

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