![SIR401DP-T1-GE3 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
SIR401DP-T1-GE3 Discrete Semiconductor Products |
|
Allicdata Part #: | SIR401DP-T1-GE3TR-ND |
Manufacturer Part#: |
SIR401DP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 20V 50A PPAK SO-8 |
More Detail: | P-Channel 20V 50A (Tc) 5W (Ta), 39W (Tc) Surface M... |
DataSheet: | ![]() |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 5W (Ta), 39W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9080pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 310nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SIR401DP-T1-GE3 chip is an integrated circuit that can be used in a variety of sensing and control applications. It is of particular value in applications requiring high accuracy, high performance, and low power dissipation. The chip consists of a high-voltage field effect transistor (FET) and two junction field effect transistors (JFETs) integrated in a single package. It is designed for use in a wide range of applications such as position sensing, temperature control, and current sensing.
The SIR401DP-T1-GE3 is designed to operate in a high-voltage field effect transistor (FET) configuration. This configuration allows it to accurately control the movement of electrons or holes in a semiconductor device. It is manufactured for high-vacuum operations, meaning it is suitable for applications where high accuracy and precise control of the device is critical.
The SIR401DP-T1-GE3 is optimized for use in sensing and control applications due to its reliability and low power consumption. It is a highly reliable device, capable of maintaining its accuracy and performance even under the most extreme environmental conditions. Its low power consumption makes it ideal for use in battery-powered applications. It also has a low gate voltage threshold and is able to operate off of a low gate voltage source.
The principle of operation of the SIR401DP-T1-GE3 is based on the transfer of information between two conducting materials. One material is the substrate upon which the device is built, while the other is a gate voltage applied to the substrate. As the gate voltage changes, the majority charge carrier of the substrate changes accordingly. This change in majority charge carrier creates an electric field that is capable of controlling the flow of electrons in the device. In this way, the device can be used for a variety of sensing and control functions.
The SIR401DP-T1-GE3 is highly reliable and is capable of maintaining its performance even under extreme environmental conditions. It is also very low power and suitable for use in battery-powered applications, making it an ideal choice for a variety of sensing and control applications. The integrated circuitry of the device is capable of producing highly accurate data and can be used for accurately measuring and controlling temperature, pressure, current, and position.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SIR496DP-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 35A PPAK ... |
SIR482DP-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 35A PPAK ... |
SIR460DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 40A PPAK ... |
SIR408DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 50A PPAK ... |
SIR406DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 40A PPAK ... |
SIR432DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 28.4A PP... |
SIR416DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 50A PPAK ... |
SIR418DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 40A PPAK ... |
SIR426DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 30A PPAK ... |
SIR422DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 40A PPAK ... |
SIR464DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 50A PPAK ... |
SIR440DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 60A PPAK ... |
SIR402DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 35A PPAK ... |
SIR438DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 60A PPAK ... |
SIR414DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 50A PPAK ... |
SIR466DP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 30V 40A PPAK ... |
SIR492DP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 12V 40A PPAK ... |
SIR472ADP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 18A PPAK ... |
SIR472DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 20A PPAK ... |
SIR494DP-T1-GE3 | Vishay Silic... | 0.77 $ | 1000 | MOSFET N-CH 12V 60A PPAK ... |
SIR474DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 20A PPAK ... |
SIR484DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 20A PPAK ... |
SIR474DP-T1-RE3 | Vishay Silic... | 0.27 $ | 1000 | MOSFET N-CH 30V 20A POWER... |
SIR403EDP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 40A PPAK ... |
SIR412DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 20A PPAK ... |
SIR436DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 40A PPAK ... |
SIR424DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 30A PPAK ... |
SIR410DP-T1-GE3 | Vishay Silic... | -- | 18000 | MOSFET N-CH 20V 35A PPAK ... |
SIR462DP-T1-GE3 | Vishay Silic... | -- | 12000 | MOSFET N-CH 30V 30A PPAK ... |
SIR468DP-T1-GE3 | Vishay Silic... | -- | 15000 | MOSFET N-CH 30V 40A PPAK ... |
SIR404DP-T1-GE3 | Vishay Silic... | -- | 6000 | MOSFET N-CH 20V 60A PPAK ... |
SIR470DP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 40V 60A PPAK ... |
SIR401DP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET P-CH 20V 50A PPAK ... |
SIR476DP-T1-GE3 | Vishay Silic... | 0.69 $ | 1000 | MOSFET N-CH 25V 60A PPAK ... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
![IRFL31N20D Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
![IXTT440N055T2 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
MOSFET N-CH 800V 14A TO-247N-Channel 800...
![IXTH14N80 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
![IXFT23N60Q Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
MOSFET N-CH 200V 72A TO-268N-Channel 200...
![IXTT72N20 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
MOSFET N-CH 800V 9A TO-268N-Channel 800V...
![IXFT9N80Q Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)