| Allicdata Part #: | SIR492DP-T1-GE3TR-ND |
| Manufacturer Part#: |
SIR492DP-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 12V 40A PPAK SO-8 |
| More Detail: | N-Channel 12V 40A (Tc) 4.2W (Ta), 36W (Tc) Surface... |
| DataSheet: |  SIR492DP-T1-GE3 Datasheet/PDF |
| Quantity: | 3000 |
Specifications
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Package / Case: | PowerPAK® SO-8 |
| Supplier Device Package: | PowerPAK® SO-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -50°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 4.2W (Ta), 36W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3720pF @ 6V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 8V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 3.8 mOhm @ 15A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
| Drain to Source Voltage (Vdss): | 12V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The SIR492DP-T1-GE3 is a highly efficient, high current single-channel device used in a variety of applications such as audio and power plane switching, motor control, and gate drive. It is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) technology, whose key feature is an insulated gate and high input impedance. This means that it can be switched more quickly, enabling very high frequency performance. The SIR492DP-T1-GE3 utilizes a combination of field-effect transistor (FET) and metal oxide semiconductor (MOSFET) technology to achieve this performance.The SIR492DP-T1-GE3 is designed to be used in applications that require very low gate capacitance, high speed switching and linear response times. It utilizes a P-type Substrate FET (Power FET) for fast switching and an N-type Substrate FET (Depletion Mode FET) for low gate capacitance and linear response times. The application fields for the SIR492DP-T1-GE3 are motor control, gate drive, audio and power plane switching, logic level shifter, smart phone LCD display control, low-power battery management, and low-power I/O.The working principle of the SIR492DP-T1-GE3 is based on the technology of metal-oxide-semiconductor field-effect transistors. In this arrangement, the source and drain of the device are connected to each other through an insulated gate. A small voltage is applied to the gate to cause a current flow between the source and the drain. The gate acts as an electrical field that repels electrons away from the source, allowing the current to flow between the source and the drain. This arrangement allows for high speed switching and linear response times.The SIR492DP-T1-GE3 also utilizes the technology of ion trap tunneling, which is a process by which electrons are transferred between regions in a semiconductor material. In the case of the SIR492DP-T1-GE3, the ion trap tunneling process is utilized in order to reduce on-state resistance, resulting in a low-power and high-speed switching characteristic.The SIR492DP-T1-GE3 is a high current, single-channel device that contains a combination of field-effect transistors and MOSFETs. It is designed to be used in applications that require very low gate capacitance, high speed switching and linear response times. In addition, the SIR492DP-T1-GE3 utilizes ion trap tunneling to reduce on-state resistance, resulting in a low-power, high-speed switching characteristic. The application fields for the SIR492DP-T1-GE3 include motor control, gate drive, audio and power plane switching, logic level shifter, smart phone LCD display control, low-power battery management, and low-power I/O.
The specific data is subject to PDF, and the above content is for reference
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