![SIR464DP-T1-GE3 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | SIR464DP-T1-GE3TR-ND |
Manufacturer Part#: |
SIR464DP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 50A PPAK SO-8 |
More Detail: | N-Channel 30V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 5.2W (Ta), 69W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3545pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 3.1 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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.The SIR464DP-T1-GE3 belongs to a family of single-channel, enhancement-mode field-effect power transistors (FETs). It is a N-channel MOSFET that is designed with benefits such as low on-state resistance and low gate charge to improve conduction efficiency. It is available in a TO-220 package and has the following features: two leads; a drain terminal separated from the source; an isolated gate terminal; and an isolated drain terminal. It is an ideal choice for a variety of applications, from automotive electronics to motor drives.
The SIR464DP-T1-GE3 is a MOSFET transistor made up of two distinct regions between the source and drain terminals – the channel and the normally-off gate. It is also known as a Depletion Mode MOSFET because under normal circumstances, the channel is pinched off and thus, the current flow is blocked. The provision of an electric field across the gate will cause the depletion region to expand and enable charge carriers to pass through the channel, thus allowing the current to flow.
In addition to its depleting function, the SIR464DP-T1-GE3 is also capable of acting as an amplifying device. The gate can be used to adjust the current that flows through the transistor by changing the width of the depletion region. This allows the transistor to amplify this small current, thus providing an output that is larger than the input.
The SIR464DP-T1-GE3 is widely used in a variety of applications, including motor drives, DC-DC conversion, and load switching. Its flexibility makes it ideal for use in applications that require high current capacity and a fast switching speed. Its low on-state resistance allows for higher frequency switching, thereby increasing system efficiency. Its low gate charge also helps to reduce switching loss and increase the system’s power efficiency. It is also suitable for use in inductive switching where its low turn-on voltage makes it ideal for use with low-voltage supplies.
The SIR464DP-T1-GE3 is also suitable for automotive electronics applications such as powering lights, engine control, and power management. Its low on-state resistance and fast switching speed make it ideal for use in a variety of automotive systems such as HVAC and engine control systems. Its high current capacity can also be beneficial in applications requiring current regulation and load switching.
In summary, the SIR464DP-T1-GE3 is a versatile single-channel field-effect transistor that is ideal for a wide range of applications. Its low on-state resistance and fast switching speed make it suitable for high current demands, while its low gate charge helps to reduce switching loss. As such, it is an ideal choice for a variety of applications, from automotive systems to motor drives.
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