SIR466DP-T1-GE3

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The SIR466DP-T1-GE3, which is classified under transistors, FETs and MOSFETs – single, is a three-terminal, field effect transistor, with 4-mm symmetry QFN package in surface mount type. This type of transistor is suitable for linear, low voltage, power management applications. With advanced process and optimization design, this remarkable device is able to enhance power dissipation over traditional transistors, resulting in improved operating performance, greater design flexibility and smaller system size.

The SIR466DP-T1-GE3 transistors are widely applied in, but not limited to, Automotive and Intelligent High Speed, IGBT Speed Sensor, Automotive and Industrial, High Side and Low Side Driver, SMPS, Brushed DC Motor Control and HVAC Controllers.

The key voltages of the SIR 466DP-T1-GE3 are drain voltage (V_DS), gate-source voltage (V_GS), and drain-source voltage (V_DD). The drain and gate terminals of this device are reverse-doped (n and p-type) regions, forming a type of semiconductor junction known as the metal-oxide-semiconductor field effect transistor (MOSFET). The SIR466DP-T1-GE3 is then capable of controlling current flow between source and drain terminals by varying voltage on the gate terminal.

When the gate-source voltage (V_GS) is at or above the threshold voltage, the device is "on" or activated and allows current to flow in the form of an electric current between source and drain terminals. On the other hand, when the gate-source voltage (V_GS) is below the threshold voltage, the device is "off" or deactivated, and no current can flow between source and drain terminals. A low gate-source voltage (V_GS) will cause a large electric resistance, resulting in a low drain-source voltage (V_DS) and a low electric current between source and drain. The SIR466DP-T1-GE3 operates with a single gate control, resulting in an ease of control and greater efficiency.

The primary function of the SIR466DP-T1-GE3 is to control and switch the flow of current under suitable voltage conditions. This allows the transistor to be used in many different applications, ranging from relatively simple low-voltage switch circuitry to complex linear voltage regulator systems. The drain-source voltage (V_DS) of the SIR466DP-T1-GE3 is typically limited to a maximum of 10V, which allows the device to be used in a variety of applications, from high power motor control to low noise sensitive analog circuits.

The SIR466DP-T1-GE3 also features a variety of features that give it a level of safety, reliability and precision when dealing with high power applications. The device is equipped with a built-in current sensing circuitry as well as a low on-state resistance, which helps to reduce power dissipation. Additionally, the SIR466DP-T1-GE3 has a wide range of operating temperatures which enable it to be used in extreme environmental conditions.

The SIR466DP-T1-GE3 is a reliable and powerful three-terminal, field effect transistor that has been designed for a wide variety of linear and power management applications. With its advanced process and optimization design, this powerful device is able to enhance power dissipation over traditional transistors, resulting in improved performance, greater design flexibility and smaller system size.

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