
SIR440DP-T1-GE3 Discrete Semiconductor Products |
|
Allicdata Part #: | SIR440DP-T1-GE3TR-ND |
Manufacturer Part#: |
SIR440DP-T1-GE3 |
Price: | $ 0.70 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 20V 60A PPAK SO-8 |
More Detail: | N-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surfa... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.70000 |
10 +: | $ 0.67900 |
100 +: | $ 0.66500 |
1000 +: | $ 0.65100 |
10000 +: | $ 0.63000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 6.25W (Ta), 104W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6000pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 1.55 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SIR440DP-T1-GE3 is a type of MOSFET, which stands for Metal-Oxide-Semiconductor Field-Effect Transistor. This device, in the form of a single gate, erosion–protected, low-voltage, all-silicon, low-Qg multiple-gate transistor, is used in a variety of applications that require low-output drive current, high-switching speeds, and superior load performance.
The SIR440DP-T1-GE3 is primarily used in common-source and high-voltage, CMOS, and RF applications. In addition, it can be used in switch circuits, audio power applications, inverters, and amplifier circuits. This MOSFET can also be used to switch high-speed signals in motor control and high-speed logic devices.
The SIR440DP-T1-GE3 has a maximum drain-source voltage of up to 45V and a maximum drain current of up to 320mA. It also has a maximum drain-source resistance of up to 208 m-ohm, a maximum power dissipation of up to 1W, and a capacitance between the gate and source of up to 10pF. In addition, the SIR440DP-T1-GE3 has an on-state drain-source resistance of up to 3.8 m-ohm and a gate-source threshold voltage of up to 3.5V.
The working principle of the SIR440DP-T1-GE3 is relatively straightforward. The gate-source voltage applied to it may be either AC or DC, typically between -4.5V and 12V. Allowing a current to flow through the source-drain path based on the gate voltage, this device can be used to either open or close the circuit, depending on the type of application. It can also be used as an amplifier by controlling the amount of current applied to the gate. This allows for more precise control of the output current.
The SIR440DP-T1-GE3 is a versatile device with a wide range of applications. Due to its low input drive current, high-switching speeds, low-source capacitance, and superior load performance, it is suitable for most applications that require a low-voltage, single-ended device. This makes it a valuable component in many different circuits and devices. Additionally, its ease of use and low-cost make it a popular choice for developers and manufacturers alike.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SIR403EDP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 40A PPAK ... |
SIR406DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 40A PPAK ... |
SIR422DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 40A PPAK ... |
SIR466DP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 30V 40A PPAK ... |
SIR474DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 20A PPAK ... |
SIR474DP-T1-RE3 | Vishay Silic... | 0.27 $ | 1000 | MOSFET N-CH 30V 20A POWER... |
SIR404DP-T1-GE3 | Vishay Silic... | -- | 6000 | MOSFET N-CH 20V 60A PPAK ... |
SIR402DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 35A PPAK ... |
SIR472ADP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 18A PPAK ... |
SIR410DP-T1-GE3 | Vishay Silic... | -- | 18000 | MOSFET N-CH 20V 35A PPAK ... |
SIR416DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 50A PPAK ... |
SIR462DP-T1-GE3 | Vishay Silic... | -- | 12000 | MOSFET N-CH 30V 30A PPAK ... |
SIR418DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 40A PPAK ... |
SIR476DP-T1-GE3 | Vishay Silic... | 0.69 $ | 1000 | MOSFET N-CH 25V 60A PPAK ... |
SIR436DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 40A PPAK ... |
SIR438DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 60A PPAK ... |
SIR460DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 40A PPAK ... |
SIR496DP-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 35A PPAK ... |
SIR432DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 28.4A PP... |
SIR414DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 50A PPAK ... |
SIR484DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 20A PPAK ... |
SIR401DP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET P-CH 20V 50A PPAK ... |
SIR426DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 30A PPAK ... |
SIR440DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 60A PPAK ... |
SIR494DP-T1-GE3 | Vishay Silic... | 0.77 $ | 1000 | MOSFET N-CH 12V 60A PPAK ... |
SIR492DP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 12V 40A PPAK ... |
SIR468DP-T1-GE3 | Vishay Silic... | -- | 15000 | MOSFET N-CH 30V 40A PPAK ... |
SIR472DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 20A PPAK ... |
SIR482DP-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 35A PPAK ... |
SIR464DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 50A PPAK ... |
SIR424DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 30A PPAK ... |
SIR412DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 20A PPAK ... |
SIR408DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 25V 50A PPAK ... |
SIR470DP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 40V 60A PPAK ... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

MOSFET N-CH 800V 14A TO-247N-Channel 800...

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

MOSFET N-CH 200V 72A TO-268N-Channel 200...

MOSFET N-CH 800V 9A TO-268N-Channel 800V...
