SIR440DP-T1-GE3 Allicdata Electronics

SIR440DP-T1-GE3 Discrete Semiconductor Products

Allicdata Part #:

SIR440DP-T1-GE3TR-ND

Manufacturer Part#:

SIR440DP-T1-GE3

Price: $ 0.70
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 20V 60A PPAK SO-8
More Detail: N-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surfa...
DataSheet: SIR440DP-T1-GE3 datasheetSIR440DP-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: $ 0.70000
10 +: $ 0.67900
100 +: $ 0.66500
1000 +: $ 0.65100
10000 +: $ 0.63000
Stock 1000Can Ship Immediately
$ 0.7
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 1.55 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SIR440DP-T1-GE3 is a type of MOSFET, which stands for Metal-Oxide-Semiconductor Field-Effect Transistor. This device, in the form of a single gate, erosion–protected, low-voltage, all-silicon, low-Qg multiple-gate transistor, is used in a variety of applications that require low-output drive current, high-switching speeds, and superior load performance.

The SIR440DP-T1-GE3 is primarily used in common-source and high-voltage, CMOS, and RF applications. In addition, it can be used in switch circuits, audio power applications, inverters, and amplifier circuits. This MOSFET can also be used to switch high-speed signals in motor control and high-speed logic devices.

The SIR440DP-T1-GE3 has a maximum drain-source voltage of up to 45V and a maximum drain current of up to 320mA. It also has a maximum drain-source resistance of up to 208 m-ohm, a maximum power dissipation of up to 1W, and a capacitance between the gate and source of up to 10pF. In addition, the SIR440DP-T1-GE3 has an on-state drain-source resistance of up to 3.8 m-ohm and a gate-source threshold voltage of up to 3.5V.

The working principle of the SIR440DP-T1-GE3 is relatively straightforward. The gate-source voltage applied to it may be either AC or DC, typically between -4.5V and 12V. Allowing a current to flow through the source-drain path based on the gate voltage, this device can be used to either open or close the circuit, depending on the type of application. It can also be used as an amplifier by controlling the amount of current applied to the gate. This allows for more precise control of the output current.

The SIR440DP-T1-GE3 is a versatile device with a wide range of applications. Due to its low input drive current, high-switching speeds, low-source capacitance, and superior load performance, it is suitable for most applications that require a low-voltage, single-ended device. This makes it a valuable component in many different circuits and devices. Additionally, its ease of use and low-cost make it a popular choice for developers and manufacturers alike.

The specific data is subject to PDF, and the above content is for reference

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